Infineon Technologies IPB039N10N3GATMA1 MOSFETs
MOSFET N-CH 100V 160A TO263-7
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
IPB039N10N3GATMA1
Detailed Description
MOSFET N-CH 100V 160A TO263-7
Package
TO-263-7, D2PAK (6 Leads + Tab)
Lifecycle Status
Active
Datasheet
IPB039N10N3GATMA1 Datasheet
Quick Jump:
Technical Specifications
Infineon Technologies IPB039N10N3GATMA1 MOSFETs technical specifications.
General
Series
OptiMOS™
RoHS
Compliant with Exemption
Number of Pins
7
Number of Channels
1 Channel
Package / Case
TO-263-7, D2PAK
Packaging
TAPE & REEL
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 175°C (TJ)
Lifecycle Status
Active
Channel Mode
Enhancement
Alternate Parts Comparison (IPB039N10N3GATMA1 vs IPB160N04S3-H2 vs IPB70N04S406ATMA1 vs IPB17N25S3100ATMA1)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Mounting Type | Surface Mount | SMD (SMT) | SMD/SMT | SMD/SMT |
| Technology | MOSFET (Metal Oxide) | MOSFET | Si | Si |
| Series | OptiMOS™ | -- | XPB70N04 | XPB17N25 |
| Operating Temperature | -55°C ~ 175°C (TJ) | -- | - 55°C ~ + 175°C | - 55°C ~ + 175°C |
| Number of Channels | 1 Channel | -- | 1 Channel | 1 Channel |
| RoHS | Compliant with Exemption | -- | Yes | Yes |
| Channel Mode | Enhancement | -- | Enhancement | Enhancement |
| Configuration | Single Quint Source | -- | Single | Single |
| Fall Time | 14 ns | -- | 9 ns | 1.2 ns |
| Package | Tape & Reel (TR) | -- | PG-TO263-3 | TO-263-3 |
| Pd Power Dissipation | 214 W | -- | 58 W | 107 W |
| Qg Gate Charge | 117 nC | -- | 32 nC | 19 nC |
| Action |
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