Infineon Technologies IPB17N25S3100ATMA1 MOSFETs
MOSFET N-CH 250V 17A TO263-3
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
IPB17N25S3100ATMA1
Detailed Description
MOSFET N-CH 250V 17A TO263-3
Package
TO-263-3
Lifecycle Status
Active
Datasheet
IPB17N25S3100ATMA1 Datasheet
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Technical Specifications
Infineon Technologies IPB17N25S3100ATMA1 MOSFETs technical specifications.
General
Series
XPB17N25
RoHS
Yes
Number of Channels
1 Channel
Mounting Type
SMD/SMT
Operating Temperature
- 55°C ~ + 175°C
Technology
Si
Transistor Polarity
N-Channel
Vds Drain Source Breakdown Voltage
250 V
ID Continuous Drain Current
17 A
Rds on Drain Source Resistance
85 mOhms
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| This Part | Related Part | Related Part | Related Part | |
|---|---|---|---|---|
| RoHS | Yes | Yes | Yes | Yes |
| Package | TO-263-3 | TO-263-3 | TO-263-3 | TO-263-3 |
| Qualification | AEC-Q101 | Automotive | -- | -- |
| Technology | Si | OptiMOS™-T | -- | -- |
| Series | XPB17N25 | -- | -- | -- |
| Mounting Type | SMD/SMT | -- | -- | -- |
| Operating Temperature | - 55°C ~ + 175°C | -- | -- | -- |
| Number of Channels | 1 Channel | -- | -- | -- |
| Channel Mode | Enhancement | -- | -- | -- |
| Configuration | Single | -- | -- | -- |
| Fall Time | 1.2 ns | -- | -- | -- |
| ID Continuous Drain Current | 17 A | -- | -- | -- |
| Action |
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