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Infineon Technologies IPB031N08N5ATMA1 MOSFETs

MOSFET N-CH 80V 120A D2PAK

5 ActiveInfineon TechnologiesTO-263-3, D2PAK (2 Leads + Tab), TO-263AB$8.71
IPB031N08N5ATMA1 TO-263-3, D2PAK (2 Leads + Tab), TO-263AB package illustration

Same model may have multiple batches, images only for reference.

IPB031N08N5ATMA1
Part Number (MPN)
IPB031N08N5ATMA1
Detailed Description
MOSFET N-CH 80V 120A D2PAK
Package
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Lifecycle Status
Active
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Technical Specifications

Infineon Technologies IPB031N08N5ATMA1 MOSFETs technical specifications.

General

Series
OptiMOS™
RoHS
Compliant with Exemption
Number of Pins
3
Number of Channels
1 Channel
Package / Case
TO-263-3, D2PAK
Packaging
TAPE & REEL
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 175°C (TJ)
Lifecycle Status
active and preferred
Channel Mode
Enhancement

Alternate Parts Comparison (IPB031N08N5ATMA1 vs IRFS4020PBF vs IRLZ24NS vs IRL540NSPBF)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Package / CaseTO-263-3, D2PAKTO-263-3, D2PAKTO-263-3, D2PAKTO-263-3, D2PAK
Mounting TypeSurface MountSurface MountSurface MountSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)-55°C ~ 175°C (TJ)-55°C ~ 175°C (TJ)-55°C ~ 175°C (TJ)
RoHSCompliant with ExemptionROHS3 CompliantRoHS non-compliantROHS3 Compliant
Lifecycle Statusactive and preferredObsoleteObsoleteObsolete
Current Continuous Drain ID 25 C120A (Tc)18A (Tc)18A (Tc)36A (Tc)
Drain to Source Voltage Vdss80 V200 V55 V100 V
Drive Voltage Max Rds on Min Rds on6V, 10V10 V4V, 10V4V, 10V
Fet TypeN-ChannelN-ChannelN-ChannelN-Channel
Gate Charge Qg Max Vgs87 nC @ 10 V29 nC @ 10 V15 nC @ 5 V74 nC @ 5 V
Input Capacitance Ciss Max Vds6240 pF @ 40 V1200 pF @ 50 V480 pF @ 25 V1800 pF @ 25 V
Moisture Sensitivity Level MSL1 (Unlimited)1 (Unlimited)1 (Unlimited)1 (Unlimited)
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