Infineon Technologies BFS17WE6327HTSA1 RF BJT
BFS17WE6327HTSA1 by Infineon Technologies · RF BJT · PG-SOT323
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
BFS17WE6327HTSA1
Package
PG-SOT323
Lifecycle Status
Obsolete
Datasheet
BFS17WE6327HTSA1 Datasheet
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Technical Specifications
Infineon Technologies BFS17WE6327HTSA1 RF BJT technical specifications.
General
Package / Case
Tape & Reel
Mounting Type
Surface Mount
Operating Temperature
150°C (TJ)
Lifecycle Status
Obsolete
Current Collector IC Max
25 mA
Dc Current Gain Hfe Min IC Vce
40 @ 2mA, 1V
Frequency Transition
1.4 GHz
Noise Figure Db Typ F
3.5dB ~ 5dB @ 800MHz
Power Max
280 mW
Transistor Type
NPN
Alternate Parts Comparison (BFS17WE6327HTSA1 vs BFS17SH6327XTSA1 vs BFS481H6327XTSA1 vs BFS17WH6327XTSA1)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Lifecycle Status | Obsolete | discontinued | active and preferred | not for new design |
| Package / Case | Tape & Reel | -- | -- | -- |
| Mounting Type | Surface Mount | -- | -- | -- |
| Operating Temperature | 150°C (TJ) | -- | -- | -- |
| Current Collector IC Max | 25 mA | -- | -- | -- |
| Dc Current Gain Hfe Min IC Vce | 40 @ 2mA, 1V | -- | -- | -- |
| Frequency Transition | 1.4 GHz | -- | -- | -- |
| Noise Figure Db Typ F | 3.5dB ~ 5dB @ 800MHz | -- | -- | -- |
| Power Max | 280 mW | -- | -- | -- |
| Transistor Type | NPN | -- | -- | -- |
| Voltage Collector Emitter Breakdown Max | 15 V | -- | -- | -- |
| Completely Lead Free | -- | Yes | Yes | Yes |
| Action |
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