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Infineon Technologies BFR193WE6327 RF BJT

BFR193WE6327 by Infineon Technologies · RF BJT · PG-SOT323

In Stock ActiveInfineon TechnologiesPG-SOT323
BFR193WE6327 PG-SOT323 package illustration

Same model may have multiple batches, images only for reference.

BFR193WE6327
Part Number (MPN)
BFR193WE6327
Package
PG-SOT323
Lifecycle Status
Active
Datasheet
PDF BFR193WE6327 Datasheet
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Technical Specifications

Infineon Technologies BFR193WE6327 RF BJT technical specifications.

General

Package / Case
Bulk
Mounting Type
Surface Mount
Operating Temperature
150°C (TJ)
Lifecycle Status
Active
Current Collector IC Max
80 mA
Dc Current Gain Hfe Min IC Vce
70 @ 30mA, 8V
Estimated Eol Date
Obsolete / End of life
Family
RF Transistors(BJT)
Family Name
BFR193W
Frequency Transition
8 GHz

Alternate Parts Comparison (BFR193WE6327 vs BFR 380F E6327 vs BFR949L3E6327 vs BFR93AWH6327XTSA1)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Package / CaseBulkSOT-723SC-101, SOT-883--
Mounting TypeSurface MountSurface MountSurface Mount--
Operating Temperature150°C (TJ)150°C (TJ)150°C (TJ)--
Current Collector IC Max80 mA80mA50mA--
Dc Current Gain Hfe Min IC Vce70 @ 30mA, 8V90 @ 40mA, 3V100 @ 5mA, 6V--
Frequency Transition8 GHz14GHz9GHz--
Gain10.5dB ~ 16dB9.5dB ~ 13.5dB21.5dB--
Noise Figure Db Typ F1dB ~ 1.6dB @ 900MHz ~ 1.8GHz1.1dB ~ 1.6dB @ 1.8GHz ~ 3GHz1dB ~ 2.5dB @ 1GHz--
Power Max580 mW380mW250mW--
Transistor TypeNPNNPNNPN--
Voltage Collector Emitter Breakdown Max12 V9V10V--
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