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Infineon Technologies BFP196WH6740 RF BJT

BFP196WH6740 by Infineon Technologies · RF BJT · SC-82A,SOT-343

In Stock ActiveInfineon TechnologiesSC-82A,SOT-343
BFP196WH6740 SC-82A,SOT-343 package illustration

Same model may have multiple batches, images only for reference.

BFP196WH6740
Part Number (MPN)
BFP196WH6740
Package
SC-82A,SOT-343
Lifecycle Status
Active
Datasheet
PDF BFP196WH6740 Datasheet
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Technical Specifications

Infineon Technologies BFP196WH6740 RF BJT technical specifications.

General

RoHS
Yes
Mounting Type
Surface Mount
Operating Temperature
150°C (TJ)
Lifecycle Status
Active
Transistor Type
NPN
Voltage Collector Emitter Breakdown Max
12V
Frequency Transition
7.5GHz
Noise Figure Db Typ F
1.3dB ~ 2.3dB @ 900MHz ~ 1.8GHz
Gain
19dB
Power Max
700mW

Alternate Parts Comparison (BFP196WH6740 vs BFP420H6433XTMA1 vs BFP460H6327XTSA1 vs BFP193E6327HTSA1)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Mounting TypeSurface MountSurface MountSurface MountSurface Mount
Operating Temperature150°C (TJ)150°C (TJ)150°C (TJ)150°C (TJ)
RoHSYesYesYesYes
Current Collector IC Max150mA35mA70mA80mA
Dc Current Gain Hfe Min IC Vce70 @ 50mA, 8V60 @ 20mA, 4V90 @ 20mA, 3V70 @ 30mA, 8V
Frequency Transition7.5GHz25GHz22GHz8GHz
Gain19dB21dB12.5dB ~ 26.5dB12dB ~ 18dB
Noise Figure Db Typ F1.3dB ~ 2.3dB @ 900MHz ~ 1.8GHz1.1dB @ 1.8GHz0.7dB ~ 1.2dB @ 100MHz ~ 3GHz1dB ~ 1.6dB @ 900MHz ~ 1.8GHz
PackageSC-82A,SOT-343SOT-343-4SOT343-4SOT143-4-1
Power Max700mW160mW230mW580mW
Transistor TypeNPNNPNNPNNPN
Voltage Collector Emitter Breakdown Max12V5V5.8V12V
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