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Infineon Technologies BF776H6327 RF BJT

BF776H6327 by Infineon Technologies · RF BJT · SC-82A,SOT-343

In Stock ActiveInfineon TechnologiesSC-82A,SOT-343
BF776H6327 SC-82A,SOT-343 package illustration

Same model may have multiple batches, images only for reference.

BF776H6327
Part Number (MPN)
BF776H6327
Package
SC-82A,SOT-343
Lifecycle Status
Active
Datasheet
PDF BF776H6327 Datasheet
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Technical Specifications

Infineon Technologies BF776H6327 RF BJT technical specifications.

General

RoHS
Yes
Mounting Type
Surface Mount
Operating Temperature
150°C (TJ)
Lifecycle Status
Active
Transistor Type
NPN
Voltage Collector Emitter Breakdown Max
4.7V
Frequency Transition
46GHz
Noise Figure Db Typ F
0.8dB ~ 1.3dB @ 1.8GHz ~ 6GHz
Gain
24dB
Power Max
200mW

Alternate Parts Comparison (BF776H6327 vs BF799WE6327BTSA1 vs BFP420H6433XTMA1 vs BFP460H6327XTSA1)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Mounting TypeSurface MountSurface MountSurface MountSurface Mount
Operating Temperature150°C (TJ)150°C (TJ)150°C (TJ)150°C (TJ)
RoHSYesYesYesYes
Current Collector IC Max50mA35mA35mA70mA
Dc Current Gain Hfe Min IC Vce180 @ 30mA, 3V40 @ 20mA, 10V60 @ 20mA, 4V90 @ 20mA, 3V
Frequency Transition46GHz800MHz25GHz22GHz
Noise Figure Db Typ F0.8dB ~ 1.3dB @ 1.8GHz ~ 6GHz3dB @ 100MHz1.1dB @ 1.8GHz0.7dB ~ 1.2dB @ 100MHz ~ 3GHz
PackageSC-82A,SOT-343SC-70,SOT-323SOT-343-4SOT343-4
Power Max200mW280mW160mW230mW
Transistor TypeNPNNPNNPNNPN
Voltage Collector Emitter Breakdown Max4.7V20V5V5.8V
Lifecycle StatusActiveObsolete--active and preferred
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