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Infineon Technologies 2EDN8524GXTMA1 Gate Drivers

IC GATE DRVR LOW-SIDE 8WSON

10,140 ActiveInfineon Technologies8-WDFN Exposed PadRoHS
2EDN8524GXTMA1 8-WDFN Exposed Pad package illustration

Same model may have multiple batches, images only for reference.

2EDN8524GXTMA1
Part Number (MPN)
2EDN8524GXTMA1
Detailed Description
IC GATE DRVR LOW-SIDE 8WSON
Package
8-WDFN Exposed Pad
Key Features
Package / Case: 8-WDFN Exposed Pad; Mounting Type: Surface Mount
Lifecycle Status
Active
RoHS State
RoHS Compliant
Datasheet
PDF 2EDN8524GXTMA1 Datasheet
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Technical Specifications

Infineon Technologies 2EDN8524GXTMA1 Gate Drivers technical specifications.

General

Series
2EDN
RoHS
Yes
Package / Case
8-WDFN Exposed Pad
Mounting Type
Surface Mount
Operating Temperature
-40°C ~ 150°C (TJ)
Supply Voltage
4.5V ~ 20V
Lifecycle Status
Active
Input Type
Non-Inverting
Channel Type
Independent
Driven Configuration
Low-Side

Related Parts Comparison (2EDN8524GXTMA1 vs 6ED2231S12TXUMA1 vs AUIR2085STR vs 2EDN7524GXTMA1)

Side-by-side specifications of related catalog parts.

Engineering verification required. Related parts may have different electrical ratings, pinouts, footprints, and operating limits. Verify suitability for your circuit before substitution.

This PartRelated PartRelated PartRelated Part
Package / Case8-WDFN Exposed Pad28-SOIC8-SOIC8-WDFN Exposed Pad
Operating Temperature-40°C ~ 150°C (TJ)-40°C ~ 125°C (TA)-40°C ~ 150°C (TJ)-40°C ~ 150°C (TJ)
Supply Voltage4.5V ~ 20V13V ~ 20V10V ~ 15V4.5V ~ 20V
Lifecycle StatusActiveActiveActiveActive
Channel TypeIndependent3-PhaseSynchronousIndependent
Current Peak Output Source Sink5A, 5A350mA, 650mA1A, 1A5A, 5A
Driven ConfigurationLow-SideHalf-BridgeHalf-BridgeLow-Side
Gate TypeN-Channel MOSFETIGBT, SiC MOSFETN-Channel MOSFETN-Channel MOSFET
Input TypeNon-InvertingNon-InvertingRC Input CircuitNon-Inverting
Number of Drivers2622
Rise Fall Time Typ5.3ns, 4.5ns35ns, 20ns40ns, 20ns5.3ns, 4.5ns
Mounting TypeSurface Mount--Surface MountSurface Mount
Action

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