Infineon Technologies 2EDN8524GXTMA1 Gate Drivers
IC GATE DRVR LOW-SIDE 8WSON
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
2EDN8524GXTMA1
Detailed Description
IC GATE DRVR LOW-SIDE 8WSON
Package
8-WDFN Exposed Pad
Key Features
Package / Case: 8-WDFN Exposed Pad; Mounting Type: Surface Mount
Lifecycle Status
Active
RoHS State
RoHS Compliant
Datasheet
2EDN8524GXTMA1 Datasheet
Quick Jump:
Technical Specifications
Infineon Technologies 2EDN8524GXTMA1 Gate Drivers technical specifications.
General
Series
2EDN
RoHS
Yes
Package / Case
8-WDFN Exposed Pad
Mounting Type
Surface Mount
Operating Temperature
-40°C ~ 150°C (TJ)
Supply Voltage
4.5V ~ 20V
Lifecycle Status
Active
Input Type
Non-Inverting
Channel Type
Independent
Driven Configuration
Low-Side
Alternate Parts Comparison (2EDN8524GXTMA1 vs 6ED2231S12TXUMA1 vs AUIR2085STR vs 2EDN7524GXTMA1)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Package / Case | 8-WDFN Exposed Pad | 28-SOIC | 8-SOIC | 8-WDFN Exposed Pad |
| Operating Temperature | -40°C ~ 150°C (TJ) | -40°C ~ 125°C (TA) | -40°C ~ 150°C (TJ) | -40°C ~ 150°C (TJ) |
| Supply Voltage | 4.5V ~ 20V | 13V ~ 20V | 10V ~ 15V | 4.5V ~ 20V |
| Lifecycle Status | Active | Active | Active | Active |
| Channel Type | Independent | 3-Phase | Synchronous | Independent |
| Current Peak Output Source Sink | 5A, 5A | 350mA, 650mA | 1A, 1A | 5A, 5A |
| Driven Configuration | Low-Side | Half-Bridge | Half-Bridge | Low-Side |
| Gate Type | N-Channel MOSFET | IGBT, SiC MOSFET | N-Channel MOSFET | N-Channel MOSFET |
| Input Type | Non-Inverting | Non-Inverting | RC Input Circuit | Non-Inverting |
| Number of Drivers | 2 | 6 | 2 | 2 |
| Rise Fall Time Typ | 5.3ns, 4.5ns | 35ns, 20ns | 40ns, 20ns | 5.3ns, 4.5ns |
| Mounting Type | Surface Mount | -- | Surface Mount | Surface Mount |
| Action |
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