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Infineon Technologies 2EDN7523GXTMA1 Gate Drivers

IC GATE DRVR LOW-SIDE 8WSON

11,814 ActiveInfineon Technologies8-WDFN Exposed PadRoHS
2EDN7523GXTMA1 8-WDFN Exposed Pad package illustration

Same model may have multiple batches, images only for reference.

2EDN7523GXTMA1
Part Number (MPN)
2EDN7523GXTMA1
Detailed Description
IC GATE DRVR LOW-SIDE 8WSON
Package
8-WDFN Exposed Pad
Key Features
Package / Case: 8-WDFN Exposed Pad; Mounting Type: Surface Mount
Lifecycle Status
Active
RoHS State
RoHS Compliant
Datasheet
PDF 2EDN7523GXTMA1 Datasheet
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Technical Specifications

Infineon Technologies 2EDN7523GXTMA1 Gate Drivers technical specifications.

General

RoHS
Yes
Package / Case
8-WDFN Exposed Pad
Mounting Type
Surface Mount
Operating Temperature
-40°C ~ 150°C (TJ)
Supply Voltage
4.5V ~ 20V
Lifecycle Status
Active
Input Type
Inverting
Channel Type
Independent
Driven Configuration
Low-Side
Number of Drivers
2

Related Parts Comparison (2EDN7523GXTMA1 vs 6ED2231S12TXUMA1 vs AUIRS20302STR vs IRS2453DSPBF)

Side-by-side specifications of related catalog parts.

Engineering verification required. Related parts may have different electrical ratings, pinouts, footprints, and operating limits. Verify suitability for your circuit before substitution.

This PartRelated PartRelated PartRelated Part
Package / Case8-WDFN Exposed Pad28-SOIC28-SOIC14-SOIC
Operating Temperature-40°C ~ 150°C (TJ)-40°C ~ 125°C (TA)-40°C ~ 125°C (TA)-25°C ~ 125°C (TJ)
Supply Voltage4.5V ~ 20V13V ~ 20V24V ~ 150V10V ~ 15.6V
Lifecycle StatusActiveActiveObsoleteActive
Channel TypeIndependent3-Phase3-PhaseSynchronous
Current Peak Output Source Sink5A, 5A350mA, 650mA200mA, 350mA180mA, 260mA
Driven ConfigurationLow-SideHalf-BridgeHalf-BridgeFull-Bridge
Gate TypeN-Channel MOSFETIGBT, SiC MOSFETN-Channel MOSFETN-Channel MOSFET
Input TypeInvertingNon-InvertingNon-InvertingRC Input Circuit
Number of Drivers2661
Rise Fall Time Typ5.3ns, 4.5ns35ns, 20ns100ns, 35ns120ns, 50ns
Mounting TypeSurface Mount--Surface MountSurface Mount
Action

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