Infineon Technologies 6ED2231S12TXUMA1 Gate Drivers
LEVEL SHIFT SOI
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
6ED2231S12TXUMA1
Detailed Description
LEVEL SHIFT SOI
Package
28-SOIC (0.295, 7.50mm Width), 24 Leads
Key Features
Package / Case: 28-SOIC (0.295, 7.50mm Width), 24 Leads
Lifecycle Status
Active
RoHS State
RoHS Compliant
Datasheet
6ED2231S12TXUMA1 Datasheet
Quick Jump:
Technical Specifications
Infineon Technologies 6ED2231S12TXUMA1 Gate Drivers technical specifications.
General
Package / Case
28-SOIC
Operating Temperature
-40°C ~ 125°C (TA)
Supply Voltage
13V ~ 20V
Input Type
Non-Inverting
Channel Type
3-Phase
Gate Type
IGBT, SiC MOSFET
Numberof Drivers
6
Rise Fall Time Typ
35ns, 20ns
Driven Configuration
Half-Bridge
Logic Voltage - VIL, VIH
0.7V, 2.3V
Alternate Parts Comparison (6ED2231S12TXUMA1 vs IR2151SPBF vs AUIR2085STR vs 2ED21814S06JXUMA1)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Package / Case | 28-SOIC | 8-SOIC | 8-SOIC | 14-SOIC |
| Operating Temperature | -40°C ~ 125°C (TA) | -40°C ~ 150°C (TJ) | -40°C ~ 150°C (TJ) | -40°C ~ 125°C (TA) |
| Supply Voltage | 13V ~ 20V | 10V ~ 20V | 10V ~ 15V | 10V ~ 20V |
| Channel Type | 3-Phase | Synchronous | Synchronous | Independent |
| Current Peak Output Source Sink | 350mA, 650mA | 125mA, 250mA | 1A, 1A | 2.5A, 2.5A |
| Driven Configuration | Half-Bridge | Half-Bridge | Half-Bridge | High-Side and Low-Side |
| Gate Type | IGBT, SiC MOSFET | IGBT, N-Channel MOSFET | N-Channel MOSFET | IGBT, N-Channel MOSFET |
| High Side Voltage Max Bootstrap | 1200 V | 600 V | 100 V | 675 V |
| Input Type | Non-Inverting | RC Input Circuit | RC Input Circuit | Non-Inverting |
| Rise Fall Time Typ | 35ns, 20ns | 80ns, 40ns | 40ns, 20ns | 15ns, 15ns |
| Mounting Type | -- | Surface Mount | Surface Mount | Surface Mount |
| Number of Drivers | -- | 2 | 2 | 2 |
| Action |
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