Diodes Incorporated ZVP4525E6TA MOSFETs
MOSFET P-CH 250V 197MA SOT23-6
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
ZVP4525E6TA
Detailed Description
MOSFET P-CH 250V 197MA SOT23-6
Package
SOT-23-6
Lifecycle Status
Active
Datasheet
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Technical Specifications
Diodes Incorporated ZVP4525E6TA MOSFETs technical specifications.
General
Series
ZVP4525
RoHS
Yes
Number of Channels
1 Channel
Mounting Type
SMD/SMT
Technology
Si
Transistor Polarity
P-Channel
Vds Drain Source Breakdown Voltage
250 V
ID Continuous Drain Current
197 mA
Rds on Drain Source Resistance
14 Ohms
Vgs Gate Source Voltage
- 40 V, + 40 V
Related Parts Comparison (ZVP4525E6TA vs DMN6040SVTQ-13 vs DMC2700UDMQ-7 vs DMN3033LDM-7)
Side-by-side specifications of related catalog parts.
Engineering verification required. Related parts may have different electrical ratings, pinouts, footprints, and operating limits. Verify suitability for your circuit before substitution.
| This Part | Related Part | Related Part | Related Part | |
|---|---|---|---|---|
| Mounting Type | SMD/SMT | SMD/SMT | SMD/SMT | SMD/SMT |
| Number of Channels | 1 Channel | 1 Channel | 2 Channel | 1 Channel |
| RoHS | Yes | Yes | Yes | Yes |
| Channel Mode | Enhancement | Enhancement | Enhancement | Enhancement |
| Configuration | Single | Single | Dual | Single |
| ID Continuous Drain Current | 197 mA | 5 A | 1.34 A, 1.14 A | 6.9 A |
| Package | SOT-23-6 | SOT-23-6 | SOT-23-6 | SOT-23-6 |
| Pd Power Dissipation | 1.1 W | 1.8 W | 1.12 W | 2 W |
| Qg Gate Charge | 2.45 nC | 22.4 nC | 736.6 pC, 622.4 pC | 13 nC |
| Rds on Drain Source Resistance | 14 Ohms | 44 mOhms | 300 mOhms, 500 mOhms | 25 mOhms |
| Technology | Si | Si | Si | Si |
| Transistor Polarity | P-Channel | N-Channel | N-Channel, P-Channel | N-Channel |
| Action |
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