Diodes Incorporated DMN61D8LVT-13 MOSFETs
MOSFET 2N-CH 60V 0.63A TSOT26
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
DMN61D8LVT-13
Base Model
Detailed Description
MOSFET 2N-CH 60V 0.63A TSOT26
Package
SOT-23-6
Lifecycle Status
Active
Datasheet
DMN61D8LVT-13 Datasheet
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Technical Specifications
Diodes Incorporated DMN61D8LVT-13 MOSFETs technical specifications.
General
Series
DMN61
RoHS
Yes
Number of Channels
2 Channel
Mounting Type
SMD/SMT
Operating Temperature
- 55°C ~ + 150°C
Technology
Si
Transistor Polarity
N-Channel
Vds Drain Source Breakdown Voltage
60 V
ID Continuous Drain Current
630 mA
Rds on Drain Source Resistance
1.1 Ohms
Alternate Parts Comparison (DMN61D8LVT-13 vs DMN61D9U-7 vs DMN61D9UWQ-13 vs DMN61D8L-7)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Mounting Type | SMD/SMT | SMD/SMT | SMD/SMT | SMD/SMT |
| Number of Channels | 2 Channel | 1 Channel | 1 Channel | 1 Channel |
| RoHS | Yes | Yes | Yes | Yes |
| Channel Mode | Enhancement | Enhancement | Enhancement | Enhancement |
| Configuration | Dual | Single | Single | Single |
| ID Continuous Drain Current | 630 mA | 380 mA | 340 mA | 470 mA |
| Package | SOT-23-6 | SOT23-3 | SOT-323 | SOT23-3 |
| Pd Power Dissipation | 1.09 W | 540 mW | 440 mW | 610 mW |
| Qg Gate Charge | 740 pC | 400 pC | 400 pC | 740 pC |
| Rds on Drain Source Resistance | 1.1 Ohms | 2 Ohms | 1.2 Ohms | 1.8 Ohms |
| Technology | Si | Si | Si | Si |
| Transistor Polarity | N-Channel | N-Channel | N-Channel | N-Channel |
| Action |
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