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Diodes Incorporated ZTX325STOA RF BJT

ZTX325STOA by Diodes Incorporated · RF BJT

In StockDiodes Incorporated
ZTX325STOA package illustration

Same model may have multiple batches, images only for reference.

ZTX325STOA
Part Number (MPN)
ZTX325STOA
Lifecycle Status
Obsolete
Datasheet
PDF ZTX325STOA Datasheet
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Technical Specifications

Diodes Incorporated ZTX325STOA RF BJT technical specifications.

General

Package / Case
Tape & Reel
Lifecycle Status
Obsolete
Frequency Transition
1.3 GHz
Gain
53dB
Noise Figure Db Typ F
5dB @ 500MHz
Transistor Type
NPN
Voltage Collector Emitter Breakdown Max
15 V

Alternate Parts Comparison (ZTX325STOA vs ZTX325STOB vs ZTX453 vs ZTX601B)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Package / CaseTape & ReelE-Line-3, Formed LeadsE-Line-3E-Line-3
Frequency Transition1.3 GHz1.3GHz150 MHz250 MHz
Transistor TypeNPNNPNNPNNPN - Darlington
Voltage Collector Emitter Breakdown Max15 V15V100 V160 V
Lifecycle StatusObsolete--ActiveActive
Mounting Type--Through HoleThrough HoleThrough Hole
Operating Temperature---55°C ~ 200°C (TJ)-55°C ~ 200°C (TJ)-55°C ~ 200°C (TJ)
Current Collector IC Max--50mA1 A1 A
Dc Current Gain Hfe Min IC Vce--25 @ 2mA, 1V40 @ 150mA, 10V10000 @ 500mA, 10V
Power Max--350mW1 W1 W
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