Diodes Incorporated FMMTH10TC RF BJT
FMMTH10TC by Diodes Incorporated · RF BJT · SOT23-3
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
FMMTH10TC
Package
SOT23-3
Lifecycle Status
Obsolete
Datasheet
FMMTH10TC Datasheet
Quick Jump:
Technical Specifications
Diodes Incorporated FMMTH10TC RF BJT technical specifications.
General
RoHS
Yes
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 150°C (TJ)
Lifecycle Status
Obsolete
Transistor Type
NPN
Voltage Collector Emitter Breakdown Max
25V
Frequency Transition
650MHz
Noise Figure Db Typ F
3dB ~ 5dB @ 500MHz
Power Max
330mW
Dc Current Gain Hfe Min IC Vce
60 @ 4mA, 10V
Alternate Parts Comparison (FMMTH10TC vs FMMTH10TA vs HSG1002VE-TL-E)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | |
|---|---|---|---|
| Mounting Type | Surface Mount | Surface Mount | Surface Mount |
| RoHS | Yes | ROHS3 Compliant | Yes |
| Lifecycle Status | Obsolete | Obsolete | Obsolete |
| Current Collector IC Max | 25mA | 25 mA | 35mA |
| Dc Current Gain Hfe Min IC Vce | 60 @ 4mA, 10V | 60 @ 4mA, 10V | 100 @ 5mA, 2V |
| Frequency Transition | 650MHz | 650 MHz | 38GHz |
| Noise Figure Db Typ F | 3dB ~ 5dB @ 500MHz | 3dB ~ 5dB @ 500MHz | 0.7dB ~ 1.8dB @ 1.8GHz ~ 5.8GHz |
| Power Max | 330mW | 330 mW | 200mW |
| Transistor Type | NPN | NPN | NPN |
| Voltage Collector Emitter Breakdown Max | 25V | 25 V | 3.5V |
| Action |
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