Diodes Incorporated DMT6009LSS-13 MOSFETs
MOSFET N-CH 60V 10.8A 8SO T&R 2
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
DMT6009LSS-13
Detailed Description
MOSFET N-CH 60V 10.8A 8SO T&R 2
Package
8-SO
Lifecycle Status
Active
Datasheet
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Technical Specifications
Diodes Incorporated DMT6009LSS-13 MOSFETs technical specifications.
General
Series
DMT6009
RoHS
Yes
Number of Channels
1 Channel
Mounting Type
SMD/SMT
Operating Temperature
- 55°C ~ + 150°C
Technology
Si
Transistor Polarity
N-Channel
Vds Drain Source Breakdown Voltage
60 V
ID Continuous Drain Current
10.8 A
Rds on Drain Source Resistance
9.5 mOhms
Alternate Parts Comparison (DMT6009LSS-13 vs DMN5040LSS-13 vs DMP3048LSD-13 vs DMG4822SSD-13)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Mounting Type | SMD/SMT | SMD/SMT | SMD/SMT | SMD/SMT |
| Operating Temperature | - 55°C ~ + 150°C | - 55°C ~ + 150°C | - 55°C ~ + 150°C | - 55°C ~ + 150°C |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel | 2 Channel |
| RoHS | Yes | Yes | Yes | Yes |
| Channel Mode | Enhancement | Enhancement | Enhancement | Enhancement |
| Configuration | Single | Single | Single | Dual |
| ID Continuous Drain Current | 10.8 A | 5.2 A | 4.8 A | 10 A |
| Package | 8-SO | 8-SO | 8-SO | 8-SO |
| Pd Power Dissipation | 1.6 W | 1.6 W | 1.7 W | 1.42 W |
| Qg Gate Charge | 33.5 nC | 14.5 nC | 29.6 nC | 10.5 nC |
| Rds on Drain Source Resistance | 9.5 mOhms | 40 mOhms | 28 mOhms | 20 mOhms |
| Technology | Si | Si | Si | Si |
| Action |
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