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Diodes Incorporated DMN4800LSSL-13 MOSFETs

MOSFET N-CH 30V 8A 8SO

4,287 ActiveDiodes IncorporatedDMN4800LSSL8-SO$0.20
DMN4800LSSL-13 8-SO package illustration

Same model may have multiple batches, images only for reference.

DMN4800LSSL-13
Part Number (MPN)
DMN4800LSSL-13
Base Model
Detailed Description
MOSFET N-CH 30V 8A 8SO
Package
8-SO
Lifecycle Status
Active
Datasheet
PDF DMN4800LSSL-13 Datasheet
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Ordering Code Family

DMN4800LSSL groups multiple orderable suffixes under one base device. Compare package, grade, and reel options on the base-number page before substituting within the family.

2 ordering variants listed on the family page.

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Technical Specifications

Diodes Incorporated DMN4800LSSL-13 MOSFETs technical specifications.

General

Series
DMN4800
RoHS
Yes
Number of Channels
1 Channel
Mounting Type
SMD/SMT
Operating Temperature
- 55°C ~ + 150°C
Technology
Si
Transistor Polarity
N-Channel
Vds Drain Source Breakdown Voltage
30 V
ID Continuous Drain Current
8 A
Rds on Drain Source Resistance
14 mOhms

Related Parts Comparison (DMN4800LSSL-13 vs DMN4800LSSL vs DMN3033LSDQ-13 vs DMN3015LSD-13)

Side-by-side specifications of related catalog parts.

Engineering verification required. Related parts may have different electrical ratings, pinouts, footprints, and operating limits. Verify suitability for your circuit before substitution.

This PartRelated PartRelated PartRelated Part
SeriesDMN4800--DMN3033DMN3015
Mounting TypeSMD/SMT--SMD/SMTSMD/SMT
Operating Temperature- 55°C ~ + 150°C--- 55°C ~ + 150°C- 55°C ~ + 150°C
Number of Channels1 Channel--2 Channel2 Channel
RoHSYes--YesYes
Channel ModeEnhancement--EnhancementEnhancement
ConfigurationSingle--DualDual
ID Continuous Drain Current8 A--6.9 A8.4 A
Package8-SO--8-SO8-SO
Pd Power Dissipation1.46 W--2 W1.6 W
Qg Gate Charge8.7 nC--13 nC25.1 nC
Rds on Drain Source Resistance14 mOhms--20 mOhms15 mOhms
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