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Diodes Incorporated DMT4015LDV-7 MOSFETs

MOSFET 2N-CH 40V 7.8A PWRDI3333

240,000 ActiveDiodes Incorporated8-PowerVDFN$0.64
DMT4015LDV-7 8-PowerVDFN package illustration

Same model may have multiple batches, images only for reference.

DMT4015LDV-7
Part Number (MPN)
DMT4015LDV-7
Detailed Description
MOSFET 2N-CH 40V 7.8A PWRDI3333
Package
8-PowerVDFN
Lifecycle Status
Active
Datasheet
PDF DMT4015LDV-7 Datasheet
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Technical Specifications

Diodes Incorporated DMT4015LDV-7 MOSFETs technical specifications.

General

RoHS
ROHS3 Compliant
Package / Case
8-PowerVDFN
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 150°C (TJ)
Lifecycle Status
Active
Configuration
2 N-Channel (Dual)
Current Continuous Drain ID 25 C
7.8A (Ta), 21.2A (Tc)
Drain to Source Voltage Vdss
40 V
Gate Charge Qg Max Vgs
15.7nC @ 10V
Input Capacitance Ciss Max Vds
808pF @ 30V

Related Parts Comparison (DMT4015LDV-7 vs DMT6008LFG-7 vs DMT6015LFV-7 vs DMP4025SFG-13)

Side-by-side specifications of related catalog parts.

Engineering verification required. Related parts may have different electrical ratings, pinouts, footprints, and operating limits. Verify suitability for your circuit before substitution.

This PartRelated PartRelated PartRelated Part
Mounting TypeSurface MountSMD/SMTSurface MountSMD/SMT
RoHSROHS3 CompliantYesCompliantYes
Configuration2 N-Channel (Dual)SingleSingle Quad Drain Triple SourceSingle
TechnologySiSiMOSFET (Metal Oxide)Si
Number of Channels--1 Channel1 Channel1 Channel
Channel Mode--EnhancementEnhancementEnhancement
Maximum Operating Temperature C--+ 150150+ 150
Minimum Operating Temperature C--- 55-55- 55
Pd Power Dissipation--2.2 W30 W810 mW
Qg Gate Charge--22.4 nC18.9 nC33.7 nC
Rds on Drain Source Resistance--6.5 mOhms16 mOhms18 mOhms
Transistor Polarity--N-ChannelN-ChannelP-Channel
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