Diodes Incorporated DMP6023LFGQ-7 MOSFETs
MOSFET P-CH 60V 7.7A PWRDI3333-8
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
DMP6023LFGQ-7
Base Model
Detailed Description
MOSFET P-CH 60V 7.7A PWRDI3333-8
Package
8-PowerVDFN
Lifecycle Status
Active
Datasheet
Quick Jump:
Technical Specifications
Diodes Incorporated DMP6023LFGQ-7 MOSFETs technical specifications.
General
RoHS
Yes
Number of Channels
1 Channel
Mounting Type
SMD/SMT
Technology
Si
Transistor Polarity
P-Channel
Vds Drain Source Breakdown Voltage
60 V
ID Continuous Drain Current
7.7 A
Rds on Drain Source Resistance
25 mOhms
Vgs Gate Source Voltage
- 20 V, + 20 V
Threshold Voltage
3 V
Alternate Parts Comparison (DMP6023LFGQ-7 vs DMP6023LFGQ-13 vs DMP3036SFVQ-13 vs DMP3007SFG-7)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| RoHS | Yes | Yes | Yes | Yes |
| Package | 8-PowerVDFN | 8-PowerVDFN | 8-PowerVDFN | 8-PowerVDFN |
| Mounting Type | SMD/SMT | SMD/SMT | -- | SMD/SMT |
| Number of Channels | 1 Channel | 1 Channel | -- | 1 Channel |
| Channel Mode | Enhancement | Enhancement | -- | Enhancement |
| ID Continuous Drain Current | 7.7 A | 7.7 A | -- | 70 A |
| Maximum Operating Temperature C | + 150 | + 150 | -- | + 150 |
| Minimum Operating Temperature C | - 55 | - 55 | -- | - 55 |
| Pd Power Dissipation | 2.1 W | 2.1 W | -- | 2.8 W |
| Qg Gate Charge | 53.1 nC | 53.1 nC | -- | 31.2 nC |
| Rds on Drain Source Resistance | 25 mOhms | 25 mOhms | -- | 13 mOhms |
| Technology | Si | Si | -- | Si |
| Action |
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