Diodes Incorporated DMP3056LSSQ-13 MOSFETs
MOSFET BVDSS: 25V~30V SO-8 T&R 2
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
DMP3056LSSQ-13
Detailed Description
MOSFET BVDSS: 25V~30V SO-8 T&R 2
Package
SOIC-8
Lifecycle Status
Active
Datasheet
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Technical Specifications
Diodes Incorporated DMP3056LSSQ-13 MOSFETs technical specifications.
General
RoHS
Yes
Number of Channels
1 Channel
Mounting Type
SMD/SMT
Operating Temperature
- 55°C ~ + 150°C
Technology
Si
Transistor Polarity
P-Channel
Vds Drain Source Breakdown Voltage
30 V
ID Continuous Drain Current
4.9 A
Rds on Drain Source Resistance
45 mOhms
Vgs Gate Source Voltage
- 20 V, + 20 V
Alternate Parts Comparison (DMP3056LSSQ-13 vs DMC3016LSD-13 vs DMC3021LSDQ-13 vs DMC4015SSD-13)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| RoHS | Yes | Yes | Yes | Yes |
| Package | SOIC-8 | SOIC-8 | SOIC-8 | SOIC-8 |
| Mounting Type | SMD/SMT | -- | -- | -- |
| Operating Temperature | - 55°C ~ + 150°C | -- | -- | -- |
| Number of Channels | 1 Channel | -- | -- | -- |
| Channel Mode | Enhancement | -- | -- | -- |
| Configuration | Single | -- | -- | -- |
| Fall Time | 20 ns | -- | -- | -- |
| ID Continuous Drain Current | 4.9 A | -- | -- | -- |
| Pd Power Dissipation | 1.2 W | -- | -- | -- |
| Qg Gate Charge | 17.3 nC | -- | -- | -- |
| Rds on Drain Source Resistance | 45 mOhms | -- | -- | -- |
| Action |
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