Diodes Incorporated DMT6017LSS-13 MOSFETs
MOSFET N-CH 60V 9.2A 8SO
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
DMT6017LSS-13
Detailed Description
MOSFET N-CH 60V 9.2A 8SO
Package
SOIC-8
Lifecycle Status
Active
Datasheet
DMT6017LSS-13 Datasheet
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Technical Specifications
Diodes Incorporated DMT6017LSS-13 MOSFETs technical specifications.
General
RoHS
Yes
Number of Channels
1 Channel
Mounting Type
SMD/SMT
Operating Temperature
- 55°C ~ + 150°C
Technology
Si
Transistor Polarity
N-Channel
Vds Drain Source Breakdown Voltage
60 V
ID Continuous Drain Current
9.2 A
Rds on Drain Source Resistance
18 mOhms
Vgs Gate Source Voltage
- 20 V, + 20 V
Alternate Parts Comparison (DMT6017LSS-13 vs DMT8008LSS-13 vs DMT6010LSS-13 vs DMT3020LSD-13)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Mounting Type | SMD/SMT | SMD/SMT | SMD/SMT | SMD/SMT |
| RoHS | Yes | Yes | Yes | Yes |
| Package | SOIC-8 | SOIC-8 | SOIC-8 | SOIC-8 |
| Technology | Si | Si | Si | Si |
| Unit Weight | 0.026455 oz | 0.026455 oz | 0.026455 oz | 0.026455 oz |
| Operating Temperature | - 55°C ~ + 150°C | -- | - 55°C ~ + 150°C | - 55°C ~ + 150°C |
| Number of Channels | 1 Channel | -- | 1 Channel | 2 Channel |
| Channel Mode | Enhancement | -- | Enhancement | Enhancement |
| Configuration | Single | -- | Single | Dual |
| ID Continuous Drain Current | 9.2 A | -- | 14 A | 16 A |
| Pd Power Dissipation | 2.1 W | -- | 2 W | 1.5 W |
| Qg Gate Charge | 17 nC | -- | 41.3 nC | 7 nC |
| Action |
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