Diodes Incorporated DMP2110UFDBQ-7 MOSFETs
MOSFET BVDSS: 8V~24V U-DFN2020-6
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
DMP2110UFDBQ-7
Detailed Description
MOSFET BVDSS: 8V~24V U-DFN2020-6
Package
DFN2020
Lifecycle Status
Active
Datasheet
DMP2110UFDBQ-7 Datasheet
Quick Jump:
Technical Specifications
Diodes Incorporated DMP2110UFDBQ-7 MOSFETs technical specifications.
General
RoHS
Yes
Number of Channels
2 Channel
Mounting Type
SMD/SMT
Operating Temperature
- 55°C ~ + 150°C
Transistor Polarity
P-Channel
Vds Drain Source Breakdown Voltage
20 V
ID Continuous Drain Current
3.2 A
Rds on Drain Source Resistance
75 mOhms
Vgs Gate Source Voltage
- 12 V, + 12 V
Vgs Th Gate Source Threshold Voltage
1 V
Alternate Parts Comparison (DMP2110UFDBQ-7 vs DMP2104V-7 vs DMP4047LFDE-7 vs DMP10H400SK3-13)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Mounting Type | SMD/SMT | Surface Mount | Surface Mount | Surface Mount |
| Operating Temperature | - 55°C ~ + 150°C | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Number of Channels | 2 Channel | 1 Channel | 1 Channel | 1 Channel |
| RoHS | Yes | Compliant | Compliant | Compliant |
| Channel Mode | Enhancement | Enhancement | Enhancement | Enhancement |
| Configuration | Dual | Single Quad Drain | Single Quad Drain | Single |
| Pd Power Dissipation | 1.14 W | 850 mW | 700 mW | 42 W |
| Rds on Drain Source Resistance | 75 mOhms | 150 mOhms | 33 mOhms | 240 mOhms |
| Transistor Polarity | P-Channel | P-Channel | P-Channel | P-Channel |
| Vds Drain Source Breakdown Voltage | 20 V | 20 V | 40 V | 100 V |
| Vgs Th Gate Source Threshold Voltage | 1 V | 1 V | 2.2 V | 1 V |
| Fall Time | 9.5 ns | -- | 28.6 ns | 34.4 ns |
| Action |
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