Diodes Incorporated DMN6040SK3Q-13 MOSFETs
MOSFET BVDSS: 41V-60V TO252 T&R
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
DMN6040SK3Q-13
Base Model
Detailed Description
MOSFET BVDSS: 41V-60V TO252 T&R
Package
TO-252-3
Lifecycle Status
Active
Datasheet
DMN6040SK3Q-13 Datasheet
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Technical Specifications
Diodes Incorporated DMN6040SK3Q-13 MOSFETs technical specifications.
General
RoHS
Yes
Number of Channels
1 Channel
Mounting Type
SMD/SMT
Operating Temperature
- 55°C ~ + 150°C
Technology
Si
Transistor Polarity
N-Channel
Vds Drain Source Breakdown Voltage
60 V
ID Continuous Drain Current
20 A
Rds on Drain Source Resistance
40 mOhms
Vgs Gate Source Voltage
- 20 V, + 20 V
Alternate Parts Comparison (DMN6040SK3Q-13 vs DMN6040SK3-13 vs DMN4026SK3-13 vs DMN10H099SK3-13)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| RoHS | Yes | Compliant | Yes | Yes |
| Package | TO-252-3 | Tape & Reel (TR) | TO-252-3 | TO-252-3 |
| Mounting Type | SMD/SMT | Surface Mount | -- | -- |
| Operating Temperature | - 55°C ~ + 150°C | -55°C ~ 150°C (TJ) | -- | -- |
| Number of Channels | 1 Channel | 1 Channel | -- | -- |
| Channel Mode | Enhancement | Enhancement | -- | -- |
| Configuration | Single | Single | -- | -- |
| Fall Time | 4 ns | 4 ns | -- | -- |
| Pd Power Dissipation | 42 W | 42 W | -- | -- |
| Qg Gate Charge | 22.4 nC | 22.4 nC | -- | -- |
| Rds on Drain Source Resistance | 40 mOhms | 30 mOhms | -- | -- |
| Rise Time | 8.1 ns | 8.1 ns | -- | -- |
| Action |
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