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Diodes Incorporated DMTH6016LK3Q-13 MOSFETs

MOSFET N-CH 60V 10.8 TO252 T&R

150,000 ActiveDiodes IncorporatedDMTH6016LKTO-252-3$0.87
DMTH6016LK3Q-13 TO-252-3 package illustration

Same model may have multiple batches, images only for reference.

DMTH6016LK3Q-13
Part Number (MPN)
DMTH6016LK3Q-13
Base Model
Detailed Description
MOSFET N-CH 60V 10.8 TO252 T&R
Package
TO-252-3
Lifecycle Status
Active
Datasheet
PDF DMTH6016LK3Q-13 Datasheet
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Ordering Code Family

DMTH6016LK groups multiple orderable suffixes under one base device. Compare package, grade, and reel options on the base-number page before substituting within the family.

2 ordering variants listed on the family page.

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Technical Specifications

Diodes Incorporated DMTH6016LK3Q-13 MOSFETs technical specifications.

General

Series
DMTH6016
RoHS
Yes
Number of Channels
1 Channel
Mounting Type
SMD/SMT
Operating Temperature
- 55°C ~ + 175°C
Technology
Si
Transistor Polarity
N-Channel
Vds Drain Source Breakdown Voltage
60 V
ID Continuous Drain Current
10.8 A
Rds on Drain Source Resistance
17 mOhms

Related Parts Comparison (DMTH6016LK3Q-13 vs DMTH6016LK3-13 vs DMTH4007LK3Q-13 vs DMTH8012LK3-13)

Side-by-side specifications of related catalog parts.

Engineering verification required. Related parts may have different electrical ratings, pinouts, footprints, and operating limits. Verify suitability for your circuit before substitution.

This PartRelated PartRelated PartRelated Part
RoHSYesYesYesYes
PackageTO-252-3TO-252-3TO-252-3TO-252-3
SeriesDMTH6016DMTH6016----
Mounting TypeSMD/SMTSMD/SMT----
Operating Temperature- 55°C ~ + 175°C- 55°C ~ + 175°C----
Number of Channels1 Channel1 Channel----
Channel ModeEnhancementEnhancement----
ConfigurationSingleSingle----
ID Continuous Drain Current10.8 A10.8 A----
Pd Power Dissipation60 W60 W----
Qg Gate Charge17 nC17 nC----
Rds on Drain Source Resistance17 mOhms17 mOhms----
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