Diodes Incorporated DMN3135LVT-7 MOSFETs
MOSFET 2N-CH 30V 3.5A TSOT26
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
DMN3135LVT-7
Detailed Description
MOSFET 2N-CH 30V 3.5A TSOT26
Package
SOT-23-6Thin,TSOT-23-6
Lifecycle Status
Active
Datasheet
Quick Jump:
Technical Specifications
Diodes Incorporated DMN3135LVT-7 MOSFETs technical specifications.
General
Series
DMN31
RoHS
Yes
Number of Channels
2 Channel
Mounting Type
SMD/SMT
Technology
Si
Transistor Polarity
N-Channel
Vds Drain Source Breakdown Voltage
30 V
ID Continuous Drain Current
3.5 A
Rds on Drain Source Resistance
60 mOhms
Vgs Gate Source Voltage
- 10 V, + 10 V
Alternate Parts Comparison (DMN3135LVT-7 vs DMN61D8LVTQ-7 vs DMN3016LPS-13 vs DMN2028USS-13)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Series | DMN31 | DMN61 | DMN3016 | DMN2028 |
| Mounting Type | SMD/SMT | SMD/SMT | SMD/SMT | SMD/SMT |
| Number of Channels | 2 Channel | 2 Channel | 1 Channel | 1 Channel |
| RoHS | Yes | Yes | Yes | Yes |
| Channel Mode | Enhancement | Enhancement | Enhancement | Enhancement |
| Configuration | Dual | Dual | Single | Single |
| Fall Time | 2.5 ns | 440 ns | 5.6 ns | 12.33 ns |
| ID Continuous Drain Current | 3.5 A | 630 mA | 10.8 A | 9.8 A |
| Package | SOT-23-6Thin,TSOT-23-6 | SOT-23-6 | PowerTDFN-8 | SOIC-8 |
| Pd Power Dissipation | 1.27 W | 1.09 W | 1.18 W | 1.56 W |
| Qg Gate Charge | 4.1 nC | 740 pC | 25.1 nC | 11.6 nC |
| Rds on Drain Source Resistance | 60 mOhms | 1.1 Ohms | 16 mOhms | 20 mOhms |
| Action |
More Parts in MOSFETs
Browse additional parts from the same category, grouped by series, package type, and manufacturer. These are catalog suggestions — not verified pin-compatible alternates.
