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Diodes Incorporated DMN2991UFZ-7B MOSFETs

MOSFET N-CH 20V 550MA 3DFN

6,015 ActiveDiodes IncorporatedX2-DFN0606-3$0.15RoHS
DMN2991UFZ-7B X2-DFN0606-3 package illustration

Same model may have multiple batches, images only for reference.

DMN2991UFZ-7B
Part Number (MPN)
DMN2991UFZ-7B
Detailed Description
MOSFET N-CH 20V 550MA 3DFN
Package
X2-DFN0606-3
Lifecycle Status
Active
RoHS State
RoHS3 Compliant
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Technical Specifications

Diodes Incorporated DMN2991UFZ-7B MOSFETs technical specifications.

General

RoHS
Yes
Number of Channels
1 Channel
Mounting Type
SMD/SMT
Operating Temperature
- 55°C ~ + 150°C
Technology
Si
Transistor Polarity
N-Channel
Vds Drain Source Breakdown Voltage
20 V
ID Continuous Drain Current
550 mA
Rds on Drain Source Resistance
990 mOhms
Vgs Gate Source Voltage
- 8 V, + 8 V

Related Parts Comparison (DMN2991UFZ-7B vs DMN31D5UFZ-7B vs DMN63D8LDWQ-7 vs DMN2990UFZ-7B)

Side-by-side specifications of related catalog parts.

Engineering verification required. Related parts may have different electrical ratings, pinouts, footprints, and operating limits. Verify suitability for your circuit before substitution.

This PartRelated PartRelated PartRelated Part
RoHSYesYesYesYes
PackageX2-DFN0606-3X2-DFN0606-3TSSOP-6X2-DFN0606-3
Mounting TypeSMD/SMT--SMD/SMTSMD/SMT
Number of Channels1 Channel--2 Channel1 Channel
Channel ModeEnhancement--EnhancementEnhancement
ConfigurationSingle--DualSingle
Fall Time27.6 ns--6.3 ns, 6.3 ns7.7 ns
ID Continuous Drain Current550 mA--220 mA250 mA
Pd Power Dissipation450 mW--300 mW320 mW
Qg Gate Charge350 pC--870 pC1 nC
Rds on Drain Source Resistance990 mOhms--2.8 Ohms, 2.8 Ohms990 mOhms
Rise Time4.9 ns--3.2 ns, 3.2 ns2.1 ns
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