Diodes Incorporated DMN2450UFD-7 MOSFETs
MOSFET N-CH 20V 900MA 3DFN
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
DMN2450UFD-7
Detailed Description
MOSFET N-CH 20V 900MA 3DFN
Package
X1-DFN1212-3
Lifecycle Status
Active
Datasheet
Quick Jump:
Technical Specifications
Diodes Incorporated DMN2450UFD-7 MOSFETs technical specifications.
General
RoHS
Yes
Number of Channels
1 Channel
Mounting Type
SMD/SMT
Operating Temperature
- 55°C ~ + 150°C
Technology
Si
Transistor Polarity
N-Channel
Vds Drain Source Breakdown Voltage
20 V
ID Continuous Drain Current
900 mA
Rds on Drain Source Resistance
600 mOhms
Vgs Gate Source Voltage
- 12 V, + 12 V
Alternate Parts Comparison (DMN2450UFD-7 vs DMN63D8LDWQ-7 vs DMN62D0LFD-7 vs DMN61D9UW-7)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Mounting Type | SMD/SMT | SMD/SMT | SMD/SMT | SMD/SMT |
| Number of Channels | 1 Channel | 2 Channel | 1 Channel | 1 Channel |
| RoHS | Yes | Yes | Yes | Yes |
| Channel Mode | Enhancement | Enhancement | Enhancement | Enhancement |
| Configuration | Single | Dual | Single | Single |
| Fall Time | 5.6 ns | 6.3 ns, 6.3 ns | 8.7 ns | 8.4 ns |
| ID Continuous Drain Current | 900 mA | 220 mA | 310 mA | 340 mA |
| Package | X1-DFN1212-3 | TSSOP-6 | X1-DFN1212-3 | SOT-323 |
| Pd Power Dissipation | 800 mW | 300 mW | 480 mW | 440 mW |
| Qg Gate Charge | 700 pC | 870 pC | 500 pC | 400 pC |
| Rds on Drain Source Resistance | 600 mOhms | 2.8 Ohms, 2.8 Ohms | 2 Ohms | 1.2 Ohms |
| Rise Time | 2.4 ns | 3.2 ns, 3.2 ns | 2.1 ns | 1.8 ns |
| Action |
More Parts in MOSFETs
Browse additional parts from the same category, grouped by series, package type, and manufacturer. These are catalog suggestions — not verified pin-compatible alternates.
