Diodes Incorporated DMN21D2UFB-7 MOSFETs
MOSFET BVDSS: 8V~24V X1-DFN1006-
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
DMN21D2UFB-7
Base Model
Detailed Description
MOSFET BVDSS: 8V~24V X1-DFN1006-
Package
DFN1006
Lifecycle Status
Active
Datasheet
DMN21D2UFB-7 Datasheet
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Technical Specifications
Diodes Incorporated DMN21D2UFB-7 MOSFETs technical specifications.
General
RoHS
Yes
Number of Channels
1 Channel
Mounting Type
SMD/SMT
Operating Temperature
- 55°C ~ + 150°C
Technology
Si
Transistor Polarity
N-Channel
Vds Drain Source Breakdown Voltage
20 V
ID Continuous Drain Current
760 mA
Rds on Drain Source Resistance
990 mOhms
Vgs Gate Source Voltage
- 12 V, + 12 V
Alternate Parts Comparison (DMN21D2UFB-7 vs DMN21D2UFB-7B vs DMN21D1UDA-7B vs DMN2320UFB4-7B)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| RoHS | Yes | Compliant | Yes | Yes |
| Package | X1-DFN1006-3 | Tape & Reel (TR) | X2-DFN0806-6 | X2-DFN1006-3 |
| Mounting Type | SMD/SMT | Surface Mount | SMD/SMT | -- |
| Operating Temperature | - 55°C ~ + 150°C | -55°C ~ 150°C (TJ) | - 55°C ~ + 150°C | -- |
| Number of Channels | 1 Channel | 1 Channel | 2 Channel | -- |
| Channel Mode | Enhancement | Enhancement | Enhancement | -- |
| Configuration | Single | Single | Dual | -- |
| Fall Time | 9.8 ns | 9.8 ns | 12 ns, 12 ns | -- |
| ID Continuous Drain Current | 760 mA | -- | 455 mA | -- |
| Pd Power Dissipation | 380 mW | 380 mW | 310 mW | -- |
| Qg Gate Charge | 930 pC | 930 pC | 410 pC | -- |
| Rds on Drain Source Resistance | 990 mOhms | 600 mOhms | 500 mOhms, 500 mOhms | -- |
| Action |
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