Diodes Incorporated DMN21D1UDA-7B MOSFETs
MOSFET 2N-CH 20V 0.455A 6DFN
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
DMN21D1UDA-7B
Base Model
Detailed Description
MOSFET 2N-CH 20V 0.455A 6DFN
Package
X2-DFN0806-6
Lifecycle Status
Active
Datasheet
Quick Jump:
Technical Specifications
Diodes Incorporated DMN21D1UDA-7B MOSFETs technical specifications.
General
RoHS
Yes
Number of Channels
2 Channel
Mounting Type
SMD/SMT
Operating Temperature
- 55°C ~ + 150°C
Technology
Si
Transistor Polarity
N-Channel
Vds Drain Source Breakdown Voltage
20 V
ID Continuous Drain Current
455 mA
Rds on Drain Source Resistance
500 mOhms, 500 mOhms
Vgs Gate Source Voltage
- 8 V, + 8 V
Alternate Parts Comparison (DMN21D1UDA-7B vs DMN21D2UFB-7B vs DMN21D2UFB-7 vs DMN63D8LDWQ-7)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Mounting Type | SMD/SMT | Surface Mount | SMD/SMT | SMD/SMT |
| Number of Channels | 2 Channel | 1 Channel | 1 Channel | 2 Channel |
| RoHS | Yes | Compliant | Yes | Yes |
| Channel Mode | Enhancement | Enhancement | Enhancement | Enhancement |
| Configuration | Dual | Single | Single | Dual |
| Fall Time | 12 ns, 12 ns | 9.8 ns | 9.8 ns | 6.3 ns, 6.3 ns |
| ID Continuous Drain Current | 455 mA | -- | 760 mA | 220 mA |
| Package | X2-DFN0806-6 | Tape & Reel (TR) | X1-DFN1006-3 | TSSOP-6 |
| Pd Power Dissipation | 310 mW | 380 mW | 380 mW | 300 mW |
| Qg Gate Charge | 410 pC | 930 pC | 930 pC | 870 pC |
| Rds on Drain Source Resistance | 500 mOhms, 500 mOhms | 600 mOhms | 990 mOhms | 2.8 Ohms, 2.8 Ohms |
| Rise Time | 3.4 ns, 3.4 ns | 4.2 ns | 4.2 ns | 3.2 ns, 3.2 ns |
| Action |
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