Diodes Incorporated DMG2307LQ-7 MOSFETs
MOSFET BVDSS: 25V~30V SOT23 T&R
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
DMG2307LQ-7
Detailed Description
MOSFET BVDSS: 25V~30V SOT23 T&R
Package
SOT23-6
Lifecycle Status
Active
Datasheet
DMG2307LQ-7 Datasheet
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Technical Specifications
Diodes Incorporated DMG2307LQ-7 MOSFETs technical specifications.
General
Series
DMG2307L
RoHS
Yes
Number of Channels
1 Channel
Mounting Type
SMD/SMT
Operating Temperature
- 55°C ~ + 150°C
Technology
Si
Transistor Polarity
P-Channel
Vds Drain Source Breakdown Voltage
30 V
ID Continuous Drain Current
3.8 A
Rds on Drain Source Resistance
90 mOhms
Related Parts Comparison (DMG2307LQ-7 vs DMG7410SFG-13 vs DMG2305UX-13 vs DMG1013T-7)
Side-by-side specifications of related catalog parts.
Engineering verification required. Related parts may have different electrical ratings, pinouts, footprints, and operating limits. Verify suitability for your circuit before substitution.
| This Part | Related Part | Related Part | Related Part | |
|---|---|---|---|---|
| Mounting Type | SMD/SMT | Surface Mount | SMD/SMT | SMD/SMT |
| RoHS | Yes | Yes | Yes | Yes |
| Channel Mode | Enhancement | Enhancement | Enhancement | Enhancement |
| Configuration | Single | Single Quad Drain Triple Source | Single | Single |
| Package | SOT23-6 | QFN8 | SOT23-3 | SOT-523 |
| Series | DMG2307L | -- | DMG2305 | DMG1013 |
| Number of Channels | 1 Channel | -- | 1 Channel | 1 Channel |
| Fall Time | 13.4 ns | -- | 34.7 ns | 20.7 ns |
| ID Continuous Drain Current | 3.8 A | -- | 4.2 A | 460 mA |
| Pd Power Dissipation | 1.36 W | -- | 1.4 W | 270 mW |
| Qg Gate Charge | 8.2 nC | -- | 10.2 nC | 622.4 pC |
| Rds on Drain Source Resistance | 90 mOhms | -- | 52 mOhms | 1 Ohms |
| Action |
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