Central Semiconductor CP302-MPSH10-CT20 RF BJT
CP302-MPSH10-CT20 by Central Semiconductor · RF BJT · Die
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
CP302-MPSH10-CT20
Package
Die
Lifecycle Status
Obsolete
Datasheet
CP302-MPSH10-CT20 Datasheet
Quick Jump:
Technical Specifications
Central Semiconductor CP302-MPSH10-CT20 RF BJT technical specifications.
General
Package / Case
Tray
Mounting Type
Surface Mount
Operating Temperature
-65°C ~ 150°C (TJ)
Lifecycle Status
Obsolete
Dc Current Gain Hfe Min IC Vce
60 @ 4mA, 10V
Frequency Transition
650 MHz
Power Max
350 mW
Transistor Type
NPN
Voltage Collector Emitter Breakdown Max
25 V
Alternate Parts Comparison (CP302-MPSH10-CT20 vs CP302-MPSH10-CT vs CP617-CM4957-CT20 vs CP681-MPSH81-CT20)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Package / Case | Tray | Die | Bulk | Tray |
| Mounting Type | Surface Mount | Surface Mount | -- | Surface Mount |
| Operating Temperature | -65°C ~ 150°C (TJ) | -65°C ~ 150°C (TJ) | -- | -55°C ~ 150°C (TJ) |
| Lifecycle Status | Obsolete | -- | Obsolete | Obsolete |
| Dc Current Gain Hfe Min IC Vce | 60 @ 4mA, 10V | 60 @ 4mA, 10V | -- | 60 @ 5mA, 10V |
| Frequency Transition | 650 MHz | 650MHz | -- | 600 MHz |
| Transistor Type | NPN | NPN | -- | PNP |
| Voltage Collector Emitter Breakdown Max | 25 V | 25V | -- | 20 V |
| Action |
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