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Central Semiconductor CP302-MPSH10-CT RF BJT

RF TRANS NPNUHF/VHF

In Stock ActiveCentral SemiconductorDie
CP302-MPSH10-CT - No Image Available

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CP302-MPSH10-CT
Part Number (MPN)
CP302-MPSH10-CT
Detailed Description
RF TRANS NPNUHF/VHF
Package
Die
Lifecycle Status
Active
Datasheet
PDF CP302-MPSH10-CT Datasheet
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Technical Specifications

Central Semiconductor CP302-MPSH10-CT RF BJT technical specifications.

General

Package / Case
Die
Packaging
Tray
Mounting Type
Surface Mount
Operating Temperature
-65°C ~ 150°C (TJ)
Voltage Collector Emitter Breakdown Max
25V
Transistor Type
NPN
Power Max
350mW
Frequency Transition
650MHz
Dc Current Gain Hfe Min IC Vce
60 @ 4mA, 10V

Alternate Parts Comparison (CP302-MPSH10-CT vs CP617-CM4957-CT20 vs CP681-MPSH81-CT20 vs CP229-2N5109-CT)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Package / CaseDie------
Mounting TypeSurface Mount------
Operating Temperature-65°C ~ 150°C (TJ)------
Dc Current Gain Hfe Min IC Vce60 @ 4mA, 10V------
Frequency Transition650MHz------
Power Max350mW------
Transistor TypeNPN------
Voltage Collector Emitter Breakdown Max25V------
Action

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