Central Semiconductor CP302-MPSH10-CT RF BJT
RF TRANS NPNUHF/VHF
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
CP302-MPSH10-CT
Detailed Description
Package
Die
Key Features
Package / Case: Die | Supplier Device Package: Die | Transistor Type: NPN | Frequency - Transition: 650MHz | Voltage - Collector Emitter Breakdown (Max): 25V | Power - Max: 350mW | Mounting Type: Surface Mount
Lifecycle Status
Active
RoHS State
Unknown
Datasheet
CP302-MPSH10-CT Datasheet
Quick Jump:
Technical Specifications
Central Semiconductor CP302-MPSH10-CT RF BJT technical specifications.
General
Voltage Collector Emitter Breakdown Max
25V
Transistor Type
NPN
Supplier Device Package
Die
Power Max
350mW
Package / Case
Die
Package
Tray
Operating Temperature
-65°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Frequency Transition
650MHz
Dc Current Gain Hfe Min IC Vce
60 @ 4mA, 10V
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CM5583Central SemiconductorPackage / Case: TO-205AD, TO-39-3 Metal Can | Supplier Device Package: TO-39 | Transistor Type: PNP | Frequency - Transition: 1.3GHz | Voltage - Collector Emitter Breakdown (Max): 30V | Current - Collector (Ic) (Max): 500mA | Power - Max: 1W | Mounting Type: Through Hole