Central Semiconductor CP229-2N5109-WN RF BJT
CP229-2N5109-WN by Central Semiconductor · RF BJT · Die
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
CP229-2N5109-WN
Package
Die
Lifecycle Status
Obsolete
Datasheet
CP229-2N5109-WN Datasheet
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Technical Specifications
Central Semiconductor CP229-2N5109-WN RF BJT technical specifications.
General
Package / Case
Bulk
Mounting Type
Surface Mount
Operating Temperature
-65°C ~ 200°C (TJ)
Lifecycle Status
Obsolete
Current Collector IC Max
400 mA
Dc Current Gain Hfe Min IC Vce
40 @ 50mA, 15V
Frequency Transition
1.2 GHz
Gain
11dB
Noise Figure Db Typ F
3dB @ 200MHz
Transistor Type
NPN
Alternate Parts Comparison (CP229-2N5109-WN vs CP302-MPSH10-CT vs CP617-CM4957-CT20 vs CP681-MPSH81-CT20)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Package / Case | Bulk | Die | Bulk | Tray |
| Mounting Type | Surface Mount | Surface Mount | -- | Surface Mount |
| Operating Temperature | -65°C ~ 200°C (TJ) | -65°C ~ 150°C (TJ) | -- | -55°C ~ 150°C (TJ) |
| Lifecycle Status | Obsolete | -- | Obsolete | Obsolete |
| Dc Current Gain Hfe Min IC Vce | 40 @ 50mA, 15V | 60 @ 4mA, 10V | -- | 60 @ 5mA, 10V |
| Frequency Transition | 1.2 GHz | 650MHz | -- | 600 MHz |
| Transistor Type | NPN | NPN | -- | PNP |
| Voltage Collector Emitter Breakdown Max | 20 V | 25V | -- | 20 V |
| Action |
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