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CEL (California Eastern Laboratories) NE85630-T1 RF BJT

NE85630-T1 by CEL (California Eastern Laboratories) · RF BJT · SC-70,SOT-323

In StockCEL (California Eastern Laboratories)SC-70,SOT-323
NE85630-T1 SC-70,SOT-323 package illustration

Same model may have multiple batches, images only for reference.

NE85630-T1
Part Number (MPN)
NE85630-T1
Package
SC-70,SOT-323
Lifecycle Status
Obsolete
Datasheet
PDF NE85630-T1 Datasheet
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Technical Specifications

CEL (California Eastern Laboratories) NE85630-T1 RF BJT technical specifications.

General

RoHS
Yes
Mounting Type
Surface Mount
Operating Temperature
150°C (TJ)
Lifecycle Status
Obsolete
Transistor Type
NPN
Voltage Collector Emitter Breakdown Max
12V
Frequency Transition
4.5GHz
Noise Figure Db Typ F
1.3dB ~ 2.2dB @ 1GHz ~ 2GHz
Gain
6dB ~ 12dB
Power Max
150mW

Alternate Parts Comparison (NE85630-T1 vs NE664M04-T2-A vs NE461M02-T1-QR-AZ vs NE68019-A)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Mounting TypeSurface MountSurface MountSurface MountSurface Mount
Operating Temperature150°C (TJ)150°C (TJ)150°C (TJ)150°C (TJ)
RoHSYesYesYesYes
Lifecycle StatusObsoleteObsoleteObsoleteObsolete
Current Collector IC Max100mA500mA250mA35mA
Dc Current Gain Hfe Min IC Vce40 @ 7mA, 3V40 @ 100mA, 3V60 @ 50mA, 10V80 @ 5mA, 3V
Gain6dB ~ 12dB12dB8.3dB9.6dB
PackageSC-70,SOT-323Tape & Reel (TR)Tape & Reel (TR)SOT-523
Power Max150mW735mW2W100mW
Transistor TypeNPNNPNNPNNPN
Voltage Collector Emitter Breakdown Max12V5V15V10V
Frequency Transition4.5GHz20GHz--10GHz
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