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Winbond Electronics W988D6FBGX7E DRAM

DRAM Memory IC 256Mb (16M x 16) Parallel 133MHz 1.7V ~ 1.95V 54-VFBGA (8x9)

2,500Winbond Electronics54-VFBGA (8x9)$41.71
W988D6FBGX7E - No Image Available

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W988D6FBGX7E
Part Number (MPN)
W988D6FBGX7E
Detailed Description
256Mb Mobile LPSDR | IC DRAM 256M PARALLEL 54VFBGA
Package
54-VFBGA (8x9)
Lifecycle Status
Last Time Buy
Datasheet
PDF W988D6FBGX7E Datasheet
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Technical Specifications

Winbond Electronics W988D6FBGX7E DRAM technical specifications.

General

Memory Size
256Mb (16M x 16)
Package / Case
54-TFBGA
Packaging
Tray
Mounting Type
Surface Mount
Operating Temperature
-25°C ~ 85°C (TC)
Supply Voltage
1.7V ~ 1.95V
Lifecycle Status
Last Time Buy
MSL Level
3 (168 Hours)
Max Frequency
133MHz
Memory Interface
Parallel

Alternate Parts Comparison (W988D6FBGX7E vs W9825G6KH-6 vs W9464G6KH-5 vs W634GU6QB-11)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Mounting TypeSurface MountSurface MountSurface MountSurface Mount
Operating Temperature-25°C ~ 85°C (TC)0 ~ 700°C ~ 70°C (TA)0°C ~ 95°C (TC)
Supply Voltage1.7V ~ 1.95V3 ~ 3.62.3V ~ 2.7V1.283V ~ 1.45V
Memory Size256Mb (16M x 16)256M64M4Gbit
Package / Case54-TFBGA--66-TSSOP96-VFBGA
Access Time5.4ns--55 ns20 ns
Max Frequency133MHz--200 MHz933 MHz
Memory FormatDRAM--DRAMDRAM
Memory InterfaceParallel--ParallelParallel
Memory TypeVolatile--VolatileVolatile
TechnologySDRAM - Mobile LPSDR--SDRAM - DDRSDRAM - DDR3L
Write Cycle Time Word Page15ns--15ns15ns
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