Winbond Electronics W949D2DBJX5E DRAM

Name: W949D2DBJX5E
Brand: Winbond Electronics
SKU: W949D2DBJX5E

DRAM Memory IC 512M LVCMOS 200 MHz

In Stock ActiveWinbond ElectronicsBGARoHS

Same model may have multiple batches, images only for reference.

W949D2DBJX5E

Manufacturer

Winbond Electronics

Part Number (MPN)

W949D2DBJX5E

Technical Specifications

Winbond Electronics W949D2DBJX5E DRAM technical specifications.

General

Interface

LVCMOS

Memory Size

512M

Data Bus Width

Maximum Clock Frequency

200

RoHS

Compliant

Number of Pins

Mounting Type

Surface Mount

Operating Temperature

-25 ~ 85

Supply Voltage

1.7 ~ 1.95

Lifecycle Status

Active

Alternate Parts Comparison (W949D2DBJX5E vs W956A8MBYA5I vs W972GG8KS-25 vs W97AH6KBVX2I)

Side-by-side technical parameter comparison of related primary models in this product family.

	This Part	Alternate Parts	Alternate Parts	Alternate Parts
	Winbond ElectronicsW949D2DBJX5E	Winbond ElectronicsW956A8MBYA5I	Winbond ElectronicsW972GG8KS-25	Winbond ElectronicsW97AH6KBVX2I
Mounting Type	Surface Mount	Surface Mount	Surface Mount	Surface Mount
Operating Temperature	-25 ~ 85	-40°C ~ 85°C (TC)	0°C ~ 85°C (TC)	-40°C ~ 85°C (TA)
Supply Voltage	1.7 ~ 1.95	2.7V ~ 3.6V	1.7V ~ 1.9V	1.14V ~ 1.95V
Memory Size	512M	64M	2G	1G
Interface	LVCMOS	HyperBus	SSTL_18	HSUL_12
Number of Pins	90	24	60	134
RoHS	Compliant	Compliant	Compliant	Compliant
Lifecycle Status	Active	Active	Active	Active
Address Bus Width Bit	15	24	18	16
Automotive	No	No	No	No
Data Bus Width Bit	--	--	--	--
Dram Type	Mobile LPDDR SDRAM	DDR SDRAM	DDR2 SDRAM	Mobile LPDDR2 SDRAM
Action	RFQ	RFQ	RFQ	RFQ

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