Winbond Electronics W66BQ6NBUAFJ DRAM
DRAM Memory IC 2G LVSTL_11 1.6 GHz 1.06V ~ 1.17V, 1.7V ~ 1.95V 200-WFBGA (10x14.5)
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
W66BQ6NBUAFJ
Detailed Description
IC DRAM 2GBIT LVSTL 11 200WFBGA
Package
BGA
Lifecycle Status
Active
RoHS State
RoHS Compliant
Datasheet
W66BQ6NBUAFJ Datasheet
Quick Jump:
Technical Specifications
Winbond Electronics W66BQ6NBUAFJ DRAM technical specifications.
General
Interface
LVSTL_11
Memory Size
2G
Data Bus Width
16
Maximum Clock Frequency
3200
RoHS
Compliant
Number of Pins
200
Package / Case
200-WFBGA
Mounting Type
Surface Mount
Operating Temperature
-40°C ~ 105°C (TC)
Supply Voltage
1.06V ~ 1.17V, 1.7V ~ 1.95V
Alternate Parts Comparison (W66BQ6NBUAFJ vs W634GU6RB-11 vs W9751G6NB-25 vs W9751G6NB25I)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Operating Temperature | -40°C ~ 105°C (TC) | 0 ~ 95 | 0 ~ 85 | -40 ~ 95 |
| Supply Voltage | 1.06V ~ 1.17V, 1.7V ~ 1.95V | 1.283 ~ 1.45 | 1.7 ~ 1.9 | 1.7 ~ 1.9 |
| Memory Size | 2G | 4G | 512M | 512M |
| Number of Pins | 200 | 96 | 84 | 84 |
| RoHS | Compliant | Compliant | Compliant | Compliant |
| Lifecycle Status | Active | Active | Active | Active |
| Address Bus Width Bit | 17 | 18 | 15 | 15 |
| Data Bus Width Bit | -- | -- | -- | -- |
| Dram Type | Mobile LPDDR4X SDRAM | DDR3L SDRAM | DDR2 SDRAM | DDR2 SDRAM |
| Maximum Access Time Ns | 3.6 | 0.195 | 0.4 | 0.4 |
| Maximum Clock Rate Mhz | -- | -- | -- | -- |
| Action |
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