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Winbond Electronics W63AH6NBVABE DRAM

DRAM Memory IC 1G HSUL_12 800 MHz 1.14V ~ 1.3V, 1.7V ~ 1.95V 178-VFBGA (11x11.5)

In Stock ActiveWinbond ElectronicsBGARoHS
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W63AH6NBVABE
Part Number (MPN)
W63AH6NBVABE
Detailed Description
IC DRAM 1GBIT HSUL 12 178VFBGA
Package
BGA
Lifecycle Status
Active
RoHS State
RoHS Compliant
Datasheet
PDF W63AH6NBVABE Datasheet
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Technical Specifications

Winbond Electronics W63AH6NBVABE DRAM technical specifications.

General

Interface
HSUL_12
Memory Size
1G
RoHS
Compliant
Number of Pins
178
Package / Case
178-VFBGA
Mounting Type
Surface Mount
Operating Temperature
-25°C ~ 85°C (TC)
Supply Voltage
1.14V ~ 1.3V, 1.7V ~ 1.95V
Lifecycle Status
Active
Automotive
No

Alternate Parts Comparison (W63AH6NBVABE vs W634GU6RB-11 vs W9751G6NB-25 vs W9751G6NB25I)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Mounting TypeSurface MountSurface MountSurface MountSurface Mount
Operating Temperature-25°C ~ 85°C (TC)0 ~ 950 ~ 85-40 ~ 95
Supply Voltage1.14V ~ 1.3V, 1.7V ~ 1.95V1.283 ~ 1.451.7 ~ 1.91.7 ~ 1.9
Memory Size1G4G512M512M
Number of Pins178968484
RoHSCompliantCompliantCompliantCompliant
Lifecycle StatusActiveActiveActiveActive
AutomotiveNoNoNoNo
Dram TypeMobile LPDDR3 SDRAMDDR3L SDRAMDDR2 SDRAMDDR2 SDRAM
PackageBGABGABGABGA
Package Height0.670.6(Max)0.6(Max)0.6(Max) mm
Package Length11.51312.512.5 mm
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