Winbond Electronics W63AH2NBVADE DRAM
DRAM Memory IC 1G HSUL_12 2133 MHz
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
W63AH2NBVADE
Detailed Description
LPDDR3 DRAM Chip
Package
BGA
Lifecycle Status
Active
RoHS State
RoHS Compliant
Datasheet
W63AH2NBVADE Datasheet
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Technical Specifications
Winbond Electronics W63AH2NBVADE DRAM technical specifications.
General
Interface
HSUL_12
Memory Size
1G
Data Bus Width
32
Maximum Clock Frequency
2133
RoHS
Compliant
Number of Pins
178
Mounting Type
Surface Mount
Operating Temperature
-25 ~ 85
Supply Voltage
1.14/1.7 ~ 1.3/1.95
Lifecycle Status
Active
Alternate Parts Comparison (W63AH2NBVADE vs W956A8MBYA5I vs W634GU6RB-11 vs W631GG6MB12I)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Operating Temperature | -25 ~ 85 | -40°C ~ 85°C (TC) | 0 ~ 95 | -40°C ~ 95°C (TC) |
| Supply Voltage | 1.14/1.7 ~ 1.3/1.95 | 2.7V ~ 3.6V | 1.283 ~ 1.45 | 1.425V ~ 1.575V |
| Memory Size | 1G | 64M | 4G | 1G |
| Number of Pins | 178 | 24 | 96 | 96 |
| RoHS | Compliant | Compliant | Compliant | Compliant |
| Lifecycle Status | Active | Active | Active | Obsolete |
| Address Bus Width Bit | 16 | 24 | 18 | 16 |
| Automotive | No | No | No | No |
| Data Bus Width Bit | -- | -- | -- | -- |
| Dram Type | Mobile LPDDR3 SDRAM | DDR SDRAM | DDR3L SDRAM | DDR3 SDRAM |
| Maximum Access Time Ns | 5.5 | 35(Min) | 0.195 | 0.225 |
| Action |
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