Vishay SUD19P06-60-E3 MOSFETs
P-Channel MOSFET, 60V, 18.3A, 60mR, TO-252, Surface Mount
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
SUD19P06-60-E3
Base Model
Detailed Description
P-Channel MOSFET, 60V, 18.3A, 60mR, TO-252, Surface Mount
Package
TO-252-3,DPAK(2Leads+Tab),SC-63
Lifecycle Status
Active
Datasheet
SUD19P06-60-E3 Datasheet
Quick Jump:
Technical Specifications
Vishay SUD19P06-60-E3 MOSFETs technical specifications.
General
Series
SUD
RoHS
Yes
Number of Channels
1 Channel
Mounting Type
SMD/SMT
Technology
Si
Transistor Polarity
P-Channel
Vds Drain Source Breakdown Voltage
60 V
ID Continuous Drain Current
18.3 A
Rds on Drain Source Resistance
60 mOhms
Vgs Gate Source Voltage
- 20 V, + 20 V
Alternate Parts Comparison (SUD19P06-60-E3 vs SUD19P06-60L-E3 vs SUD19P06-60-GE3 vs SUD50P10-43L-BE3)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Mounting Type | SMD/SMT | Surface Mount | Surface Mount | SMD/SMT |
| Number of Channels | 1 Channel | 1 | 1 | 1 Channel |
| RoHS | Yes | Yes | Yes | Yes |
| Technology | Si | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | Si |
| Series | SUD | TrenchFET® | TrenchFET® | -- |
| Threshold Voltage | 3 V | -- | -3 V | 3 V |
| Fall Time | -- | 30 ns | 30 ns | 100 ns |
| Rise Time | -- | 9 ns | 9 ns | 160 ns |
| Action |
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