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Vishay SQ4153EY-T1_GE3 MOSFETs

MOSFET P-CHANNEL 12V 25A 8SOIC

50 ActiveVishay8-SOIC (0.154", 3.90mm Width)$4.31
SQ4153EY-T1_GE3 8-SOIC (0.154", 3.90mm Width) package illustration

Same model may have multiple batches, images only for reference.

SQ4153EY-T1_GE3
Manufacturer
Part Number (MPN)
SQ4153EY-T1_GE3
Detailed Description
MOSFET P-CHANNEL 12V 25A 8SOIC
Package
8-SOIC (0.154", 3.90mm Width)
Lifecycle Status
Active
Datasheet
PDF SQ4153EY-T1_GE3 Datasheet
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Technical Specifications

Vishay SQ4153EY-T1_GE3 MOSFETs technical specifications.

General

Series
TrenchFET®
RoHS
RoHS Compliant
Number of Channels
1 Channel
Package / Case
8-SOIC
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 175°C (TJ)
Lifecycle Status
Active
Channel Mode
Enhancement
Configuration
Single
Continuous Drain Current ID
25 A

Alternate Parts Comparison (SQ4153EY-T1_GE3 vs SQ4050EY-T1_GE3 vs SQ4470EY-T1_GE3 vs SQ4410EY-T1_GE3)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
SeriesTrenchFET®TrenchFET®TrenchFET®TrenchFET®
Package / Case8-SOIC8-SOIC8-SOIC8-SOIC
Mounting TypeSurface MountSurface MountSurface MountSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)-55°C ~ 175°C (TJ)-55°C ~ 175°C (TJ)-55°C ~ 175°C (TJ)
Number of Channels1 Channel1 Channel1 Channel1 Channel
RoHSRoHS CompliantRoHS CompliantROHS3 CompliantROHS3 Compliant
Lifecycle StatusActiveActiveActiveActive
Channel ModeEnhancementEnhancementEnhancementEnhancement
ConfigurationSingleSingleSingleSingle
Current Continuous Drain ID 25 C25A (Tc)19A (Tc)16A (Tc)15A (Tc)
Drain to Source Voltage Vdss12 V40 V60 V30 V
Drive Voltage Max Rds on Min Rds on1.8V, 4.5V4.5V, 10V6V, 10V4.5V, 10V
Action

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