Vishay SIRA18DP-T1-GE3 MOSFETs
Power Field-Effect Transistor, 33A I(D), 30V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
SIRA18DP-T1-GE3
Detailed Description
Power Field-Effect Transistor, 33A I(D), 30V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8
Package
PowerPAK-SO-8
Lifecycle Status
Active
Datasheet
SIRA18DP-T1-GE3 Datasheet
Quick Jump:
Technical Specifications
Vishay SIRA18DP-T1-GE3 MOSFETs technical specifications.
General
Series
SIR
RoHS
Yes
Number of Channels
1 Channel
Mounting Type
SMD/SMT
Operating Temperature
- 55°C ~ + 150°C
Technology
Si
Transistor Polarity
N-Channel
Vds Drain Source Breakdown Voltage
30 V
ID Continuous Drain Current
33 A
Rds on Drain Source Resistance
6 mOhms
Alternate Parts Comparison (SIRA18DP-T1-GE3 vs SIRA24DP-T1-GE3 vs SI7949DP-T1-GE3 vs SIR820DP-T1-GE3)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| RoHS | Yes | Yes | Yes | Yes |
| Package | PowerPAK-SO-8 | PowerPAK-SO-8 | PowerPAK-SO-8 | PowerPAK-SO-8 |
| Series | SIR | SIR | -- | SIR |
| Mounting Type | SMD/SMT | SMD/SMT | -- | SMD/SMT |
| Technology | Si | Si | -- | Si |
| Trade Name | TrenchFET, PowerPAK | TrenchFET, PowerPAK | -- | TrenchFET, PowerPAK |
| Unit Weight | 0.017870 oz | 0.017870 oz | -- | 0.017870 oz |
| Action |
Cross Reference
Manufacturer-stated alternates from official cross-reference tools. These are not a guaranteed pin-compatible drop-in. Qualify package, pinout, and electrical limits against the datasheet before a board change. See cross-reference vs drop-in compatible .
Suggested replacements
NTMFS4C13NT1GonsemiSimilaronsemi
Pin YesPkg NoElec Yes
Single N-Channel Power MOSFET 30V, 38A, 9.1mΩ, DFN5 5X6, 1.27P (SO 8FL), 1500-REEL
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