Vishay SIRA18ADP-T1-GE3 MOSFETs
Power Field-Effect Transistor, 30.6A I(D), 30V, 0.0087ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
SIRA18ADP-T1-GE3
Detailed Description
Power Field-Effect Transistor, 30.6A I(D), 30V, 0.0087ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8
Package
PowerPAK-SO-8
Lifecycle Status
Active
Datasheet
SIRA18ADP-T1-GE3 Datasheet
Quick Jump:
Technical Specifications
Vishay SIRA18ADP-T1-GE3 MOSFETs technical specifications.
General
RoHS
Yes
Package
PowerPAK-SO-8
Alternate Parts Comparison (SIRA18ADP-T1-GE3 vs SIRA24DP-T1-GE3 vs SI7461DP-T1-E3 vs SI7658ADP-T1-GE3)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| RoHS | Yes | Yes | Yes | Yes |
| Package | PowerPAK-SO-8 | PowerPAK-SO-8 | PowerPAK-SO-8 | PowerPAK-SO-8 |
| Series | -- | SIR | SI7 | SI7 |
| Mounting Type | -- | SMD/SMT | SMD/SMT | SMD/SMT |
| Number of Channels | -- | 1 Channel | 1 Channel | 1 Channel |
| Channel Mode | -- | Enhancement | Enhancement | Enhancement |
| Configuration | -- | Single | Single | Single |
| Fall Time | -- | 17 ns | 90 ns | 5 ns |
| Forward Transconductance Min | -- | 75 S | 31 S | 100 S |
| ID Continuous Drain Current | -- | 60 A | 14.4 A | 60 A |
| Maximum Operating Temperature C | -- | + 150 | + 150 | + 150 |
| Minimum Operating Temperature C | -- | - 55 | - 55 | - 55 |
| Action |
Cross Reference
Manufacturer-stated alternates from official cross-reference tools. These are not a guaranteed pin-compatible drop-in. Qualify package, pinout, and electrical limits against the datasheet before a board change. See cross-reference vs drop-in compatible .
Suggested replacements
Similaronsemi
Pin YesPkg NoElec Yes
Single N-Channel Power MOSFET 30V, 38A, 9.1mΩ, DFN5 5X6, 1.27P (SO 8FL), 1500-REEL
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