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Vishay SIRA18ADP-T1-GE3 MOSFETs

Power Field-Effect Transistor, 30.6A I(D), 30V, 0.0087ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8

1,983 ActiveVishayPowerPAK-SO-8$0.74
SIRA18ADP-T1-GE3 PowerPAK-SO-8 package illustration

Same model may have multiple batches, images only for reference.

SIRA18ADP-T1-GE3
Manufacturer
Part Number (MPN)
SIRA18ADP-T1-GE3
Detailed Description
Power Field-Effect Transistor, 30.6A I(D), 30V, 0.0087ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8
Package
PowerPAK-SO-8
Lifecycle Status
Active
Datasheet
PDF SIRA18ADP-T1-GE3 Datasheet
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Technical Specifications

Vishay SIRA18ADP-T1-GE3 MOSFETs technical specifications.

General

RoHS
Yes
Package
PowerPAK-SO-8

Alternate Parts Comparison (SIRA18ADP-T1-GE3 vs SIRA24DP-T1-GE3 vs SI7461DP-T1-E3 vs SI7658ADP-T1-GE3)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
RoHSYesYesYesYes
PackagePowerPAK-SO-8PowerPAK-SO-8PowerPAK-SO-8PowerPAK-SO-8
Series--SIRSI7SI7
Mounting Type--SMD/SMTSMD/SMTSMD/SMT
Number of Channels--1 Channel1 Channel1 Channel
Channel Mode--EnhancementEnhancementEnhancement
Configuration--SingleSingleSingle
Fall Time--17 ns90 ns5 ns
Forward Transconductance Min--75 S31 S100 S
ID Continuous Drain Current--60 A14.4 A60 A
Maximum Operating Temperature C--+ 150+ 150+ 150
Minimum Operating Temperature C--- 55- 55- 55
Action

Cross Reference

Manufacturer-stated alternates from official cross-reference tools. These are not a guaranteed pin-compatible drop-in. Qualify package, pinout, and electrical limits against the datasheet before a board change. See cross-reference vs drop-in compatible .

Suggested replacements

NTMFS4C13NT1GNTMFS4C13NT1Gonsemi
Similaronsemi
Pin YesPkg NoElec Yes
Single N-Channel Power MOSFET 30V, 38A, 9.1mΩ, DFN5 5X6, 1.27P (SO 8FL), 1500-REEL

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