Vishay SIR882DP-T1-GE3 MOSFETs
MOSFET N-CH 100V 60A PPAK SO-8
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
SIR882DP-T1-GE3
Base Model
Detailed Description
MOSFET N-CH 100V 60A PPAK SO-8
Package
PowerPAK-SO-8
Lifecycle Status
Active
Datasheet
SIR882DP-T1-GE3 Datasheet
Quick Jump:
Technical Specifications
Vishay SIR882DP-T1-GE3 MOSFETs technical specifications.
General
Series
SIR
RoHS
Yes
Number of Channels
1 Channel
Mounting Type
SMD/SMT
Technology
Si
Transistor Polarity
N-Channel
Vds Drain Source Breakdown Voltage
100 V
ID Continuous Drain Current
60 A
Rds on Drain Source Resistance
7.1 mOhms
Vgs Gate Source Voltage
- 20 V, + 20 V
Alternate Parts Comparison (SIR882DP-T1-GE3 vs SIR882DP vs SIR820DP-T1-GE3 vs SIR403EDP-T1-GE3)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Series | SIR | -- | SIR | SIR |
| Mounting Type | SMD/SMT | -- | SMD/SMT | SMD/SMT |
| RoHS | Yes | -- | Yes | Yes |
| Package | PowerPAK-SO-8 | -- | PowerPAK-SO-8 | PowerPAK-SO-8 |
| Technology | Si | -- | Si | Si |
| Trade Name | TrenchFET, PowerPAK | -- | TrenchFET, PowerPAK | TrenchFET, PowerPAK |
| Unit Weight | 0.017870 oz | -- | 0.017870 oz | 0.017870 oz |
| Action |
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