Vishay SIR460DP-T1-GE3 MOSFETs
30V 40A N-CH MOSFET, 4.9mR RdsOn, PPAK 8SOIC
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
SIR460DP-T1-GE3
Detailed Description
30V 40A N-CH MOSFET, 4.9mR RdsOn, PPAK 8SOIC
Package
PowerPAK-SO-8
Lifecycle Status
Active
Datasheet
SIR460DP-T1-GE3 Datasheet
Quick Jump:
Technical Specifications
Vishay SIR460DP-T1-GE3 MOSFETs technical specifications.
General
Series
SIR
RoHS
Yes
Number of Channels
1 Channel
Mounting Type
SMD/SMT
Technology
Si
Transistor Polarity
N-Channel
Vds Drain Source Breakdown Voltage
30 V
ID Continuous Drain Current
40 A
Rds on Drain Source Resistance
4.7 mOhms
Vgs Gate Source Voltage
- 20 V, + 20 V
Alternate Parts Comparison (SIR460DP-T1-GE3 vs SIR820DP-T1-GE3 vs SIR164ADP-T1-GE3 vs SIR403EDP-T1-GE3)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Series | SIR | SIR | SIR | SIR |
| Mounting Type | SMD/SMT | SMD/SMT | SMD/SMT | SMD/SMT |
| RoHS | Yes | Yes | Yes | Yes |
| Package | PowerPAK-SO-8 | PowerPAK-SO-8 | PowerPAK-SO-8 | PowerPAK-SO-8 |
| Technology | Si | Si | Si | Si |
| Trade Name | TrenchFET, PowerPAK | TrenchFET, PowerPAK | TrenchFET, PowerPAK | TrenchFET, PowerPAK |
| Unit Weight | 0.017870 oz | 0.017870 oz | 0.017870 oz | 0.017870 oz |
| Number of Channels | 1 Channel | -- | 1 Channel | 1 Channel |
| Channel Mode | Enhancement | -- | Enhancement | Enhancement |
| Configuration | Single | -- | Single | Single |
| ID Continuous Drain Current | 40 A | -- | 40 A | 40 A |
| Pd Power Dissipation | 48 W | -- | 62.5 W | 56.8 W |
| Action |
Cross Reference
Manufacturer-stated alternates from official cross-reference tools. These are not a guaranteed pin-compatible drop-in. Qualify package, pinout, and electrical limits against the datasheet before a board change. See cross-reference vs drop-in compatible .
Suggested replacements
Similaronsemi
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N-Channel Power MOSFET, 30V, 78A, 3.4mΩ, DFN5x6
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