Vishay SIR438DP-T1-GE3 MOSFETs
N-CH MOSFET 25V 60A 1.9mR PowerPAK SO-8 SM
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
SIR438DP-T1-GE3
Detailed Description
N-CH MOSFET 25V 60A 1.9mR PowerPAK SO-8 SM
Package
PowerPAK-SO-8
Lifecycle Status
Active
Datasheet
SIR438DP-T1-GE3 Datasheet
Quick Jump:
Technical Specifications
Vishay SIR438DP-T1-GE3 MOSFETs technical specifications.
General
Series
SIR
RoHS
Yes
Number of Channels
1 Channel
Mounting Type
SMD/SMT
Operating Temperature
- 55°C ~ + 150°C
Technology
Si
Transistor Polarity
N-Channel
Vds Drain Source Breakdown Voltage
25 V
ID Continuous Drain Current
60 A
Rds on Drain Source Resistance
1.8 mOhms
Alternate Parts Comparison (SIR438DP-T1-GE3 vs SIR820DP-T1-GE3 vs SIR626DP-T1-RE3 vs SIR426DP-T1-GE3)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Series | SIR | SIR | SIR | SIR |
| Mounting Type | SMD/SMT | SMD/SMT | SMD/SMT | SMD/SMT |
| RoHS | Yes | Yes | Yes | Yes |
| Package | PowerPAK-SO-8 | PowerPAK-SO-8 | PowerPAK-SO-8 | PowerPAK-SO-8 |
| Technology | Si | Si | Si | Si |
| Trade Name | TrenchFET, PowerPAK | TrenchFET, PowerPAK | TrenchFET, PowerPAK | TrenchFET, PowerPAK |
| Unit Weight | 0.017870 oz | 0.017870 oz | 0.017870 oz | 0.017870 oz |
| Number of Channels | 1 Channel | -- | 1 Channel | 1 Channel |
| Channel Mode | Enhancement | -- | Enhancement | Enhancement |
| Configuration | Single | -- | Single | Single |
| ID Continuous Drain Current | 60 A | -- | 100 A | 30 A |
| Pd Power Dissipation | 83 W | -- | 104 W | 41.7 W |
| Action |
Cross Reference
Manufacturer-stated alternates from official cross-reference tools. These are not a guaranteed pin-compatible drop-in. Qualify package, pinout, and electrical limits against the datasheet before a board change. See cross-reference vs drop-in compatible .
Suggested replacements
NTMFS4C025NT1GonsemiDirectonsemi
Pin YesPkg YesElec Upgrade
Single N−Channel Power MOSFET 30 V, 69 A, 3.41mΩ, 1500-REEL
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