Vishay SIHLL110TR-GE3 MOSFETs
Small Signal Field-Effect Transistor, 1.5A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA,
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
SIHLL110TR-GE3
Detailed Description
Small Signal Field-Effect Transistor, 1.5A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA,
Package
SOT-223
Lifecycle Status
Active
Datasheet
Quick Jump:
Technical Specifications
Vishay SIHLL110TR-GE3 MOSFETs technical specifications.
General
RoHS
Yes
Number of Channels
1 Channel
Mounting Type
SMD/SMT
Operating Temperature
- 55°C ~ + 150°C
Technology
Si
Transistor Polarity
N-Channel
Vds Drain Source Breakdown Voltage
100 V
ID Continuous Drain Current
1.5 A
Rds on Drain Source Resistance
540 mOhms
Vgs Gate Source Voltage
- 10 V, + 10 V
Alternate Parts Comparison (SIHLL110TR-GE3 vs IRFL9014 vs IRLL110TR vs IRFL110TRPBF)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| RoHS | Yes | Yes | Yes | Yes |
| Technology | Si | Si | Si | MOSFET (Metal Oxide) |
| Package | SOT-223 | SOT-223 | SOT-223 | -- |
| Unit Weight | 0.008818 oz | 0.008818 oz | 0.008818 oz | -- |
| Mounting Type | SMD/SMT | -- | -- | Surface Mount |
| Operating Temperature | - 55°C ~ + 150°C | -- | -- | -55°C ~ 150°C (TJ) |
| Number of Channels | 1 Channel | -- | -- | 1 |
| Fall Time | 18 ns | -- | -- | 9.4 ns |
| Rise Time | 47 ns | -- | -- | 16 ns |
| Channel Mode | Enhancement | -- | -- | -- |
| Configuration | Single | -- | -- | -- |
| Forward Transconductance Min | 0.57 S | -- | -- | -- |
| Action |
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