Vishay SIHG065N60E-GE3 MOSFETs
Power Field-Effect Transistor,
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
SIHG065N60E-GE3
Detailed Description
Power Field-Effect Transistor,
Package
TO-247AC
Lifecycle Status
Active
Datasheet
SIHG065N60E-GE3 Datasheet
Quick Jump:
Technical Specifications
Vishay SIHG065N60E-GE3 MOSFETs technical specifications.
General
Series
E
RoHS
Yes
Package / Case
Tube
Mounting Type
Through Hole
Operating Temperature
-55°C ~ 150°C (TJ)
Lifecycle Status
Active
Current Continuous Drain ID 25 C
40A (Tc)
Drain to Source Voltage Vdss
600 V
Drive Voltage Max Rds on Min Rds on
10 V
Fet Type
N-Channel
Alternate Parts Comparison (SIHG065N60E-GE3 vs SIHG73N60E-GE3 vs IRFP054NPBF vs IRFP240PBF)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| RoHS | Yes | Compliant | Yes | Yes |
| Mounting Type | Through Hole | Through Hole | -- | Through Hole |
| Lifecycle Status | Active | Active | not for new design | -- |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | -- | Si |
| Series | E | -- | -- | IRFP |
| Package / Case | Tube | Tube | -- | -- |
| Operating Temperature | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -- | -- |
| Current Continuous Drain ID 25 C | 40A (Tc) | 73A (Tc) | -- | -- |
| Drain to Source Voltage Vdss | 600 V | 600 V | -- | -- |
| Drive Voltage Max Rds on Min Rds on | 10 V | 10 V | -- | -- |
| Fet Type | N-Channel | N-Channel | -- | -- |
| Gate Charge Qg Max Vgs | 74 nC @ 10 V | 362 nC @ 10 V | -- | -- |
| Action |
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