Vishay SI7949DP-T1-E3 MOSFETs
P-CH MOSFET 60V 3.2A 64mR SOIC PwrPAK
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
SI7949DP-T1-E3
Base Model
Detailed Description
P-CH MOSFET 60V 3.2A 64mR SOIC PwrPAK
Package
PowerPAK-SO-8
Lifecycle Status
Active
Datasheet
SI7949DP-T1-E3 Datasheet
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Technical Specifications
Vishay SI7949DP-T1-E3 MOSFETs technical specifications.
General
Series
SI7
RoHS
Yes
Number of Channels
2 Channel
Mounting Type
SMD/SMT
Operating Temperature
- 55°C ~ + 150°C
Technology
Si
Transistor Polarity
P-Channel
Vds Drain Source Breakdown Voltage
60 V
ID Continuous Drain Current
5 A
Rds on Drain Source Resistance
64 mOhms
Alternate Parts Comparison (SI7949DP-T1-E3 vs SI7949DP-T1-GE3 vs SIP32461DB-T2-GE1 vs SIP32454DB-T2-GE1)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| RoHS | Yes | Yes | Yes | Yes |
| Package | PowerPAK-SO-8 | PowerPAK-SO-8 | UFBGA-4 | UFBGA-4 |
| Mounting Type | SMD/SMT | -- | Surface Mount | Surface Mount |
| Operating Temperature | - 55°C ~ + 150°C | -- | -40°C ~ 85°C (TA) | -40°C ~ 125°C (TJ) |
| Series | SI7 | -- | SIP324x1 | -- |
| Pd Power Dissipation | 3.5 W | -- | 300 mW | -- |
| Unit Weight | 0.017870 oz | -- | 0.002420 oz | -- |
| Number of Channels | 2 Channel | -- | -- | -- |
| Channel Mode | Enhancement | -- | -- | -- |
| Configuration | Dual | -- | -- | -- |
| ID Continuous Drain Current | 5 A | -- | -- | -- |
| Part Aliases | SI7949DP-E3 | -- | -- | -- |
| Action |
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