Vishay SI7852DP-T1-GE3 MOSFETs
80V 7.6A N-CH MOSFET, 16.5mR Rds On, 1.9W PD, SO-8
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
SI7852DP-T1-GE3
Base Model
Detailed Description
80V 7.6A N-CH MOSFET, 16.5mR Rds On, 1.9W PD, SO-8
Package
PowerPAK-SO-8
Lifecycle Status
Active
RoHS State
RoHS Compliant
Datasheet
Quick Jump:
Technical Specifications
Vishay SI7852DP-T1-GE3 MOSFETs technical specifications.
General
Series
SI7
RoHS
Yes
Number of Channels
1 Channel
Mounting Type
SMD/SMT
Technology
Si
Transistor Polarity
N-Channel
Vds Drain Source Breakdown Voltage
80 V
ID Continuous Drain Current
7.6 A
Rds on Drain Source Resistance
16.5 mOhms
Vgs Gate Source Voltage
- 20 V, + 20 V
Alternate Parts Comparison (SI7852DP-T1-GE3 vs SI7852DP-T1-E3 vs SIP32461DB-T2-GE1 vs SIP32454DB-T2-GE1)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Mounting Type | SMD/SMT | Surface Mount | Surface Mount | Surface Mount |
| RoHS | Yes | Compliant | Yes | Yes |
| Series | SI7 | TrenchFET® | SIP324x1 | -- |
| Package | PowerPAK-SO-8 | -- | UFBGA-4 | UFBGA-4 |
| Package / Case | -- | SOIC | 4-UFBGA | 4-UFBGA |
| Operating Temperature | -- | -55°C ~ 150°C (TJ) | -40°C ~ 85°C (TA) | -40°C ~ 125°C (TJ) |
| Lifecycle Status | -- | Active | Active | Active |
| Action |
Cross Reference
Manufacturer-stated alternates from official cross-reference tools. These are not a guaranteed pin-compatible drop-in. Qualify package, pinout, and electrical limits against the datasheet before a board change. See cross-reference vs drop-in compatible .
Suggested replacements
Similaronsemi
Pin NoPkg NoElec Mixed
Single N-Channel Power MOSFET 80V, 224A, 1.9mΩ, 1500-REEL
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