Vishay SI7686DP-T1-GE3 MOSFETs
30V 17.9A N-CH MOSFET SOIC 9.5mR RdsOn
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
SI7686DP-T1-GE3
Base Model
Detailed Description
30V 17.9A N-CH MOSFET SOIC 9.5mR RdsOn
Package
PowerPAK-SO-8
Lifecycle Status
Active
Datasheet
SI7686DP-T1-GE3 Datasheet
Quick Jump:
Technical Specifications
Vishay SI7686DP-T1-GE3 MOSFETs technical specifications.
General
Series
SI7
RoHS
Yes
Number of Channels
1 Channel
Mounting Type
SMD/SMT
Operating Temperature
- 50°C ~ + 150°C
Technology
Si
Transistor Polarity
N-Channel
Vds Drain Source Breakdown Voltage
30 V
ID Continuous Drain Current
35 A
Rds on Drain Source Resistance
9.5 mOhms
Alternate Parts Comparison (SI7686DP-T1-GE3 vs SI7686DP-T1-E3 vs SIP32461DB-T2-GE1 vs SIP32454DB-T2-GE1)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Mounting Type | SMD/SMT | SMD/SMT | Surface Mount | Surface Mount |
| Operating Temperature | - 50°C ~ + 150°C | - 50°C ~ + 150°C | -40°C ~ 85°C (TA) | -40°C ~ 125°C (TJ) |
| RoHS | Yes | Yes | Yes | Yes |
| Package | PowerPAK-SO-8 | PowerPAK-SO-8 | UFBGA-4 | UFBGA-4 |
| Series | SI7 | SI7 | SIP324x1 | -- |
| Pd Power Dissipation | 37.9 W | 37.9 W | 300 mW | -- |
| Unit Weight | 0.017870 oz | 0.017870 oz | 0.002420 oz | -- |
| Action |
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